Abstract
Knowledge of accurate values of elastic modulus of (Al1-xScx)N is required for design of piezoelectric resonators and related devices. Thin films of (Al1-xScx)N across the entire composition space are deposited and characterized. Accuracy of modulus measurements is improved and quantified by removing the influence of substrate effects and by direct comparison of experimental results with density functional theory calculations. The 5%-30% Sc compositional range is of particular interest for piezoelectric applications and is covered at higher compositional resolution here than in previous work. The reduced elastic modulus is found to decrease by as much as 40% with increasing Sc concentration in the wurtzite phase according to both experimental and computational techniques, whereas Sc-rich rocksalt-structured films exhibit little variation in modulus with composition.
Original language | American English |
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Article number | 8438334 |
Pages (from-to) | 2167-2175 |
Number of pages | 9 |
Journal | IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control |
Volume | 65 |
Issue number | 11 |
DOIs | |
State | Published - 2018 |
Bibliographical note
Publisher Copyright:© 1986-2012 IEEE.
NREL Publication Number
- NREL/JA-5K00-71971
Keywords
- Aluminum nitride (AlN)
- elastic modulus
- nanoindentation
- scandium nitride
- thin film