Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass: Preprint

Research output: Contribution to conferencePaper


We report characterizations of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (Voc) above 560 mV. The 2-um absorber cells are grown by low-temperature (<750 degrees C) hot-wire CVD (HWCVD) on Corning EAGLE XG display glass coated with a layer-transferred (LT) Si seed. The high Voc is a result of low-defect epitaxial Si (epi-Si) growth and effective hydrogenpassivation of defects. The quality of HWCVD epitaxial growth on seeded glass substrates depends on the crystallographic quality of the seed and the morphology of the epitaxial growth surface. Heterojunction devices consist of glass/c-Si LT seed/ epi n+ Si:P/epi n- Si:P/intrinsic a-Si:H/p+ a-Si:H/ITO. Similar devices grown on electronically 'dead' n+ wafers have given Voc630 mV and8%efficiency with no light trapping features. Here we study the effects of the seed surface polish on epi-Si quality, how hydrogenation influences the device character, and the dominant junction transport physics.
Original languageAmerican English
Number of pages6
StatePublished - 2012
Event2012 IEEE Photovoltaic Specialists Conference - Austin, Texas
Duration: 3 Jun 20128 Jun 2012


Conference2012 IEEE Photovoltaic Specialists Conference
CityAustin, Texas

NREL Publication Number

  • NREL/CP-5200-54148


  • c-Si
  • epitaxial film crystal silicon
  • PV


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