Characterization of GaAs Layers Grown Directly on Si Substrates by Metalorganic Chemical Vapor Deposition

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)862-867
    Number of pages6
    JournalJournal of Applied Physics
    Issue number3
    StatePublished - 1987

    Bibliographical note

    Work performed by AT&T Bell Laboratories, Murray Hill, New Jersey and Spire Corporation, Bedford, Massachusetts

    NREL Publication Number

    • ACNR/JA-9548

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