Characterization of GaAs Wafers and Epilayers with Electron-Beam-Induced Current, Etching, and Reflected Light

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)4248-4254
    Number of pages7
    JournalJournal of Applied Physics
    Issue number10
    StatePublished - 1987

    Bibliographical note

    Work performed by Chevron Research Company, Richmond, California and Solar Energy Research Institute, Golden, Colorado

    NREL Publication Number

    • ACNR/JA-9992

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