Characterization of Heat-Treated ITO/InP Solar Cells

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    The effects of heat treatments on the properties of InP/ITO junctions were studied using time resolved photoluminescence measurements, surface chemical analysis, and photo I-V characteristics. It was found that the surface recombination velocity (SRV) of etched InP increased from 600 to more or less 4 X 10 to the 4th cm/s after a 350 degree C heat treatment and to about 4 X 10to the 5th cm/sfollowing annealing at 500 degrees C. On the other hand annealings performed on Ar plasma treated samples increased the substrate's SRV to similar values following 80 and 200 degree C heat treatments, respectively. Surface chemical analysis showed that the increase in SRV is associated with phosphorus loss from the crystal surface which creates recombination centers at the interface. The effectof these recombination centers on the open circuit voltage of ITO/InP solar cells is demonstrated and discussed.
    Original languageAmerican English
    Pages (from-to)2354-2358
    Number of pages5
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Issue number4
    StatePublished - 1997

    NREL Publication Number

    • NREL/JA-520-24284


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