Characterization of Microvoids in Device Quality Hydrogenated Amorphous Silicon by Small Angle X-Ray Scattering and Infrared Measurements

A. H. Mahan, D. L. Williamson, B. P. Nelson, R. S. Crandall

Research output: Contribution to journalArticlepeer-review

68 Scopus Citations

Abstract

The size, shape, and number density of microvoids in device-quality glow discharge deposited hydrogenated a-Si has been obtained by small-angle x-ray scattering (SAXS). By combining the SAXS results with infrared measurements, we deduce that the interior surfaces of these microvoids are largely unhydrogenated, containing at most 49 bonded H atoms. We suggest that these H atoms are the clustered H atoms previously detected by multiple-quantum NMR.

Original languageAmerican English
Pages (from-to)12024-12027
Number of pages4
JournalPhysical Review B
Volume40
Issue number17
DOIs
StatePublished - 1989

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and Physics Department, Colorado School of Mines, Golden, Colorado

NREL Publication Number

  • ACNR/JA-212-11168

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