Characterization of Microvoids in Device Quality Hydrogenated Amorphous Silicon by Small Angle X-Ray Scattering and Infrared Measurements

A. H. Mahan; D. L. Williamson; B. P. Nelson; R. S. Crandall

doi:10.1103/PhysRevB.40.12024

Characterization of Microvoids in Device Quality Hydrogenated Amorphous Silicon by Small Angle X-Ray Scattering and Infrared Measurements

A. H. Mahan
, D. L. Williamson
, B. P. Nelson
, R. S. Crandall

Materials, Chemical, and Computational Science Research Operations

Research output: Contribution to journal › Article › peer-review

69 Scopus Citations

Abstract

The size, shape, and number density of microvoids in device-quality glow discharge deposited hydrogenated a-Si has been obtained by small-angle x-ray scattering (SAXS). By combining the SAXS results with infrared measurements, we deduce that the interior surfaces of these microvoids are largely unhydrogenated, containing at most 49 bonded H atoms. We suggest that these H atoms are the clustered H atoms previously detected by multiple-quantum NMR.

Original language	American English
Pages (from-to)	12024-12027
Number of pages	4
Journal	Physical Review B
Volume	40
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevB.40.12024 https://doi.org/10.1103/PhysRevB.40.12024
State	Published - 1989

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and Physics Department, Colorado School of Mines, Golden, Colorado

NLR Publication Number

ACNR/JA-212-11168

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title = "Characterization of Microvoids in Device Quality Hydrogenated Amorphous Silicon by Small Angle X-Ray Scattering and Infrared Measurements",

abstract = "The size, shape, and number density of microvoids in device-quality glow discharge deposited hydrogenated a-Si has been obtained by small-angle x-ray scattering (SAXS). By combining the SAXS results with infrared measurements, we deduce that the interior surfaces of these microvoids are largely unhydrogenated, containing at most 49 bonded H atoms. We suggest that these H atoms are the clustered H atoms previously detected by multiple-quantum NMR.",

author = "Mahan, \{A. H.\} and Williamson, \{D. L.\} and Nelson, \{B. P.\} and Crandall, \{R. S.\}",

note = "Work performed by Solar Energy Research Institute, Golden, Colorado, and Physics Department, Colorado School of Mines, Golden, Colorado",

year = "1989",

doi = "10.1103/PhysRevB.40.12024",

language = "American English",

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journal = "Physical Review B",

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publisher = "American Institute of Physics",

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T1 - Characterization of Microvoids in Device Quality Hydrogenated Amorphous Silicon by Small Angle X-Ray Scattering and Infrared Measurements

AU - Mahan, A. H.

AU - Williamson, D. L.

AU - Nelson, B. P.

AU - Crandall, R. S.

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado, and Physics Department, Colorado School of Mines, Golden, Colorado

PY - 1989

Y1 - 1989

N2 - The size, shape, and number density of microvoids in device-quality glow discharge deposited hydrogenated a-Si has been obtained by small-angle x-ray scattering (SAXS). By combining the SAXS results with infrared measurements, we deduce that the interior surfaces of these microvoids are largely unhydrogenated, containing at most 49 bonded H atoms. We suggest that these H atoms are the clustered H atoms previously detected by multiple-quantum NMR.

AB - The size, shape, and number density of microvoids in device-quality glow discharge deposited hydrogenated a-Si has been obtained by small-angle x-ray scattering (SAXS). By combining the SAXS results with infrared measurements, we deduce that the interior surfaces of these microvoids are largely unhydrogenated, containing at most 49 bonded H atoms. We suggest that these H atoms are the clustered H atoms previously detected by multiple-quantum NMR.

UR - https://www.scopus.com/pages/publications/0000079875

U2 - 10.1103/PhysRevB.40.12024

DO - 10.1103/PhysRevB.40.12024

M3 - Article

AN - SCOPUS:0000079875

SN - 0163-1829

VL - 40

SP - 12024

EP - 12027

JO - Physical Review B

JF - Physical Review B

IS - 17

ER -

Characterization of Microvoids in Device Quality Hydrogenated Amorphous Silicon by Small Angle X-Ray Scattering and Infrared Measurements

Abstract

Bibliographical note

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