Characterization of MOCVD Lateral Epitaxial Overgrown III-V Semiconductor Layers on GaAs Substrates

A. G. Norman; M. C. Hanna; M. J. Romero; K. M. Jones; M. M. Al-Jassim

doi:10.1109/ISCS.2003.1239898

Characterization of MOCVD Lateral Epitaxial Overgrown III-V Semiconductor Layers on GaAs Substrates

A. G. Norman, M. C. Hanna, M. J. Romero, K. M. Jones, M. M. Al-Jassim

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

Abstract

We have studied the lateral epitaxial overgrowth by MOCVD of a variety of highly mismatched III-V semiconductors on GaAs substrates. For [001] substrates we determined the oxide stripe orientation that gives the maximum lateral growth rate to be ≈ 25°from [110]. We successfully achieved that lateral overgrowth of In_xGa_1-xAs alloys on GaAs and found that the use of Bi as a surfactant led to an improvement in the morphology and luminescence uniformity. The studies have been extended to the lateral epitaxial overgrowth of InAs, GaP, and InP.

Original language	American English
Pages	45-46
Number of pages	2
DOIs	https://doi.org/10.1109/ISCS.2003.1239898
State	Published - 2003
Event	2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: 25 Aug 2003 → 27 Aug 2003

Conference

Conference	2003 International Symposium on Compound Semiconductors, ISCS 2003
Country/Territory	United States
City	San Diego
Period	25/08/03 → 27/08/03

Bibliographical note

Publisher Copyright:
© 2003 IEEE.

NREL Publication Number

NREL/CP-590-36032

Keywords

Atomic force microscopy
Gallium arsenide
III-V semiconductor materials
Indium phosphide
Low earth orbit satellites
MOCVD
Scanning electron microscopy
Substrates
Surface morphology
Transmission electron microscopy

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10.1109/ISCS.2003.1239898

Cite this

@conference{08ccc092650445439e944bacb7258736,

title = "Characterization of MOCVD Lateral Epitaxial Overgrown III-V Semiconductor Layers on GaAs Substrates",

abstract = "We have studied the lateral epitaxial overgrowth by MOCVD of a variety of highly mismatched III-V semiconductors on GaAs substrates. For [001] substrates we determined the oxide stripe orientation that gives the maximum lateral growth rate to be ≈ 25°from [110]. We successfully achieved that lateral overgrowth of InxGa1-xAs alloys on GaAs and found that the use of Bi as a surfactant led to an improvement in the morphology and luminescence uniformity. The studies have been extended to the lateral epitaxial overgrowth of InAs, GaP, and InP.",

keywords = "Atomic force microscopy, Gallium arsenide, III-V semiconductor materials, Indium phosphide, Low earth orbit satellites, MOCVD, Scanning electron microscopy, Substrates, Surface morphology, Transmission electron microscopy",

author = "Norman, {A. G.} and Hanna, {M. C.} and Romero, {M. J.} and Jones, {K. M.} and Al-Jassim, {M. M.}",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",

year = "2003",

doi = "10.1109/ISCS.2003.1239898",

language = "American English",

pages = "45--46",

}

TY - CONF

T1 - Characterization of MOCVD Lateral Epitaxial Overgrown III-V Semiconductor Layers on GaAs Substrates

AU - Norman, A. G.

AU - Hanna, M. C.

AU - Romero, M. J.

AU - Jones, K. M.

AU - Al-Jassim, M. M.

PY - 2003

Y1 - 2003

N2 - We have studied the lateral epitaxial overgrowth by MOCVD of a variety of highly mismatched III-V semiconductors on GaAs substrates. For [001] substrates we determined the oxide stripe orientation that gives the maximum lateral growth rate to be ≈ 25°from [110]. We successfully achieved that lateral overgrowth of InxGa1-xAs alloys on GaAs and found that the use of Bi as a surfactant led to an improvement in the morphology and luminescence uniformity. The studies have been extended to the lateral epitaxial overgrowth of InAs, GaP, and InP.

AB - We have studied the lateral epitaxial overgrowth by MOCVD of a variety of highly mismatched III-V semiconductors on GaAs substrates. For [001] substrates we determined the oxide stripe orientation that gives the maximum lateral growth rate to be ≈ 25°from [110]. We successfully achieved that lateral overgrowth of InxGa1-xAs alloys on GaAs and found that the use of Bi as a surfactant led to an improvement in the morphology and luminescence uniformity. The studies have been extended to the lateral epitaxial overgrowth of InAs, GaP, and InP.

KW - Atomic force microscopy

KW - Gallium arsenide

KW - III-V semiconductor materials

KW - Indium phosphide

KW - Low earth orbit satellites

KW - MOCVD

KW - Scanning electron microscopy

KW - Substrates

KW - Surface morphology

KW - Transmission electron microscopy

UR - http://www.scopus.com/inward/record.url?scp=84943529909&partnerID=8YFLogxK

U2 - 10.1109/ISCS.2003.1239898

DO - 10.1109/ISCS.2003.1239898

M3 - Paper

AN - SCOPUS:84943529909

SP - 45

EP - 46

T2 - 2003 International Symposium on Compound Semiconductors, ISCS 2003

Y2 - 25 August 2003 through 27 August 2003

ER -

Characterization of MOCVD Lateral Epitaxial Overgrown III-V Semiconductor Layers on GaAs Substrates

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

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