Characterization of SnO2 Films Prepared Using Tin Tetrachloride and Tetra Methyl Tin Precursors

    Research output: Contribution to conferencePaper

    Abstract

    We have investigated the effect of deposition conditions of SnO2 films, deposited by chemical vapor deposition using tin tetrachloride and tetramethyltin precursors, on the film properties. The type of precursor and the deposition temperature affect the morphology of the films. The structure of the films is determined by the deposition temperature: films deposited at low temperatures show a mixedSnO and SnO2 phase. The processing temperature and type of substrate determine the impurity content in the films. Electrical properties (e.g. the carrier mobility) and optical properties of the films are affected by the structure and the impurity content in these layers.
    Original languageAmerican English
    Number of pages8
    StatePublished - 1998
    EventNational Center for Photovoltaics Program Review Meeting - Denver, Colorado
    Duration: 8 Sep 199811 Sep 1998

    Conference

    ConferenceNational Center for Photovoltaics Program Review Meeting
    CityDenver, Colorado
    Period8/09/9811/09/98

    NREL Publication Number

    • NREL/CP-520-25733

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