Characterization of the Defect Levels in Copper Indium Diselenide

F. A. Abou-Elfotouh; H. Moutinho; A. Bakry; T. J. Coutts; L. L. Kazmerski

doi:10.1016/0379-6787(91)90048-T

Characterization of the Defect Levels in Copper Indium Diselenide

F. A. Abou-Elfotouh, H. Moutinho, A. Bakry, T. J. Coutts, L. L. Kazmerski

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

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Abstract

High-resolution photoluminescence (PL) measurements were carried out at 10 K to identify the energy levels associated with the various defect states dominating the semiconductor CuInSe₂ (CIS). PL measurements were taken on the bare surfaces of both thin film and single-crystal (polished and cleaved) samples and through a (Cd,Zn)S window layer deposited by thermal co-evaporation onto the CIS absorber surface. A complete energy band diagram is proposed which identifies the origin of the 12 intrinsic defect states expected in this material. The effects of surface and heat treatments, used in device fabrication processing, on the existence and generation of defect states (deep and shallow) are identified and correlated with the device performance. The inferior single-crystal device performance is correlated with presence of a high density of process-generated radiative surface recombination states and trap levels.

Original language	American English
Pages (from-to)	151-160
Number of pages	10
Journal	Solar Cells
Volume	30
Issue number	1-4
DOIs	https://doi.org/10.1016/0379-6787(91)90048-T https://doi.org/10.1016/0379-6787(91)90048-T
State	Published - 1991

NREL Publication Number

ACNR/JA-213-12403

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title = "Characterization of the Defect Levels in Copper Indium Diselenide",

abstract = "High-resolution photoluminescence (PL) measurements were carried out at 10 K to identify the energy levels associated with the various defect states dominating the semiconductor CuInSe2 (CIS). PL measurements were taken on the bare surfaces of both thin film and single-crystal (polished and cleaved) samples and through a (Cd,Zn)S window layer deposited by thermal co-evaporation onto the CIS absorber surface. A complete energy band diagram is proposed which identifies the origin of the 12 intrinsic defect states expected in this material. The effects of surface and heat treatments, used in device fabrication processing, on the existence and generation of defect states (deep and shallow) are identified and correlated with the device performance. The inferior single-crystal device performance is correlated with presence of a high density of process-generated radiative surface recombination states and trap levels.",

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T1 - Characterization of the Defect Levels in Copper Indium Diselenide

AU - Abou-Elfotouh, F. A.

AU - Moutinho, H.

AU - Bakry, A.

AU - Coutts, T. J.

AU - Kazmerski, L. L.

PY - 1991

Y1 - 1991

N2 - High-resolution photoluminescence (PL) measurements were carried out at 10 K to identify the energy levels associated with the various defect states dominating the semiconductor CuInSe2 (CIS). PL measurements were taken on the bare surfaces of both thin film and single-crystal (polished and cleaved) samples and through a (Cd,Zn)S window layer deposited by thermal co-evaporation onto the CIS absorber surface. A complete energy band diagram is proposed which identifies the origin of the 12 intrinsic defect states expected in this material. The effects of surface and heat treatments, used in device fabrication processing, on the existence and generation of defect states (deep and shallow) are identified and correlated with the device performance. The inferior single-crystal device performance is correlated with presence of a high density of process-generated radiative surface recombination states and trap levels.

AB - High-resolution photoluminescence (PL) measurements were carried out at 10 K to identify the energy levels associated with the various defect states dominating the semiconductor CuInSe2 (CIS). PL measurements were taken on the bare surfaces of both thin film and single-crystal (polished and cleaved) samples and through a (Cd,Zn)S window layer deposited by thermal co-evaporation onto the CIS absorber surface. A complete energy band diagram is proposed which identifies the origin of the 12 intrinsic defect states expected in this material. The effects of surface and heat treatments, used in device fabrication processing, on the existence and generation of defect states (deep and shallow) are identified and correlated with the device performance. The inferior single-crystal device performance is correlated with presence of a high density of process-generated radiative surface recombination states and trap levels.

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Characterization of the Defect Levels in Copper Indium Diselenide

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