Characterization of the SnO2/p and ZnO/p Contact Resistance and Junction Properties in a-Si p-i-n Solar Cells and Modules

Characterization of the SnO2/p and ZnO/p Contact Resistance and Junction Properties in a-Si p-i-n Solar Cells and Modules

Research output: Contribution to conference › Paper

Original language	American English
Pages	728-731
Number of pages	4
State	Published - 2000
Event	Twenty-Eighth IEEE Photovoltaic Specialists Conference 2000 - Anchorage, Alaska Duration: 15 Sep 2000 → 22 Sep 2000

Conference

Conference	Twenty-Eighth IEEE Photovoltaic Specialists Conference 2000
City	Anchorage, Alaska
Period	15/09/00 → 22/09/00

Bibliographical note

Work performed by University of Delaware, Newark, Delaware

NREL Publication Number

NREL/CP-520-30342

Cite this

@conference{d469034769194b60941f4cc6c83f4cc2,

title = "Characterization of the SnO2/p and ZnO/p Contact Resistance and Junction Properties in a-Si p-i-n Solar Cells and Modules",

author = "NREL",

note = "Work performed by University of Delaware, Newark, Delaware; Twenty-Eighth IEEE Photovoltaic Specialists Conference 2000 ; Conference date: 15-09-2000 Through 22-09-2000",

year = "2000",

language = "American English",

pages = "728--731",

}

TY - CONF

T1 - Characterization of the SnO2/p and ZnO/p Contact Resistance and Junction Properties in a-Si p-i-n Solar Cells and Modules

AU - NREL, null

N1 - Work performed by University of Delaware, Newark, Delaware

PY - 2000

Y1 - 2000

M3 - Paper

SP - 728

EP - 731

T2 - Twenty-Eighth IEEE Photovoltaic Specialists Conference 2000

Y2 - 15 September 2000 through 22 September 2000

ER -