Characterization of ZnGeAs2 Thin Films Produced by Pulsed Laser Deposition

Z. Z. Tang; L. Zhang; R. K. Singh; D. Wright; T. Peshek; T. Gessert; T. J. Coutts; M. Van Schilfgaarde; N. Newman

doi:10.1109/pvsc.2009.5411649

Characterization of ZnGeAs2 Thin Films Produced by Pulsed Laser Deposition

Z. Z. Tang, L. Zhang, R. K. Singh, D. Wright, T. Peshek, T. Gessert, T. J. Coutts, M. Van Schilfgaarde, N. Newman

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

We have characterized the properties of chalcopyrite ZnGeAs₂ thin films produced over a wide range of growth conditions using pulsed laser deposition. By using a Zn-enriched target, stoichiometric films could be produced up to a substrate temperature of 315° C; above which the films were Zn and As deficient. Optical absorption measurements indicate that bandgap of the ZnGeAs₂ thin films is direct with a value of -1.15 eV. Hot point probe indicate that the as-deposited and annealed thin films are both p-type. Hall measurements confirm this and also indicate that the carrier mobility, μ_p, is over 50 cm²/V·sec in the 600° C annealed samples. Channeling Rutherford Backscattering Spectroscopy (RBS) indicates that the structurally best films are achieved after 450° C annealing with a channeling yield, χ_min, of 500%. Our results, in combination with the observation that the constituents are abundant elements, suggest that ZnGeAs₂ is an ideal candidate for photovoltaic applications.

Original language	American English
Pages	437-439
Number of pages	3
DOIs	https://doi.org/10.1109/pvsc.2009.5411649 https://doi.org/10.1109/PVSC.2009.5411649
State	Published - 2009
Externally published	Yes
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: 7 Jun 2009 → 12 Jun 2009

Conference

Conference	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/Territory	United States
City	Philadelphia, PA
Period	7/06/09 → 12/06/09

NREL Publication Number

NREL/CP-520-48027

Keywords

photovoltaic
semiconductors
solar cells

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Tang, Z. Z., Zhang, L., Singh, R. K., Wright, D., Peshek, T., Gessert, T., Coutts, T. J., Van Schilfgaarde, M., & Newman, N. (2009). Characterization of ZnGeAs2 Thin Films Produced by Pulsed Laser Deposition. 437-439. Paper presented at 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States. https://doi.org/10.1109/pvsc.2009.5411649, https://doi.org/10.1109/PVSC.2009.5411649

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title = "Characterization of ZnGeAs2 Thin Films Produced by Pulsed Laser Deposition",

abstract = "We have characterized the properties of chalcopyrite ZnGeAs2 thin films produced over a wide range of growth conditions using pulsed laser deposition. By using a Zn-enriched target, stoichiometric films could be produced up to a substrate temperature of 315° C; above which the films were Zn and As deficient. Optical absorption measurements indicate that bandgap of the ZnGeAs2 thin films is direct with a value of -1.15 eV. Hot point probe indicate that the as-deposited and annealed thin films are both p-type. Hall measurements confirm this and also indicate that the carrier mobility, μp, is over 50 cm2/V·sec in the 600° C annealed samples. Channeling Rutherford Backscattering Spectroscopy (RBS) indicates that the structurally best films are achieved after 450° C annealing with a channeling yield, χmin, of 500%. Our results, in combination with the observation that the constituents are abundant elements, suggest that ZnGeAs2 is an ideal candidate for photovoltaic applications.",

keywords = "photovoltaic, semiconductors, solar cells",

author = "Tang, {Z. Z.} and L. Zhang and Singh, {R. K.} and D. Wright and T. Peshek and T. Gessert and Coutts, {T. J.} and {Van Schilfgaarde}, M. and N. Newman",

year = "2009",

doi = "10.1109/pvsc.2009.5411649",

language = "American English",

pages = "437--439",

note = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

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Tang, ZZ, Zhang, L, Singh, RK, Wright, D, Peshek, T, Gessert, T, Coutts, TJ, Van Schilfgaarde, M & Newman, N 2009, 'Characterization of ZnGeAs2 Thin Films Produced by Pulsed Laser Deposition', Paper presented at 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 7/06/09 - 12/06/09 pp. 437-439. https://doi.org/10.1109/pvsc.2009.5411649, https://doi.org/10.1109/PVSC.2009.5411649

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AU - Wright, D.

AU - Peshek, T.

AU - Gessert, T.

AU - Coutts, T. J.

AU - Van Schilfgaarde, M.

AU - Newman, N.

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N2 - We have characterized the properties of chalcopyrite ZnGeAs2 thin films produced over a wide range of growth conditions using pulsed laser deposition. By using a Zn-enriched target, stoichiometric films could be produced up to a substrate temperature of 315° C; above which the films were Zn and As deficient. Optical absorption measurements indicate that bandgap of the ZnGeAs2 thin films is direct with a value of -1.15 eV. Hot point probe indicate that the as-deposited and annealed thin films are both p-type. Hall measurements confirm this and also indicate that the carrier mobility, μp, is over 50 cm2/V·sec in the 600° C annealed samples. Channeling Rutherford Backscattering Spectroscopy (RBS) indicates that the structurally best films are achieved after 450° C annealing with a channeling yield, χmin, of 500%. Our results, in combination with the observation that the constituents are abundant elements, suggest that ZnGeAs2 is an ideal candidate for photovoltaic applications.

AB - We have characterized the properties of chalcopyrite ZnGeAs2 thin films produced over a wide range of growth conditions using pulsed laser deposition. By using a Zn-enriched target, stoichiometric films could be produced up to a substrate temperature of 315° C; above which the films were Zn and As deficient. Optical absorption measurements indicate that bandgap of the ZnGeAs2 thin films is direct with a value of -1.15 eV. Hot point probe indicate that the as-deposited and annealed thin films are both p-type. Hall measurements confirm this and also indicate that the carrier mobility, μp, is over 50 cm2/V·sec in the 600° C annealed samples. Channeling Rutherford Backscattering Spectroscopy (RBS) indicates that the structurally best films are achieved after 450° C annealing with a channeling yield, χmin, of 500%. Our results, in combination with the observation that the constituents are abundant elements, suggest that ZnGeAs2 is an ideal candidate for photovoltaic applications.

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KW - semiconductors

KW - solar cells

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Y2 - 7 June 2009 through 12 June 2009

ER -

Characterization of ZnGeAs2 Thin Films Produced by Pulsed Laser Deposition

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