Characterization of ZnGeAs2 Thin Films Produced by Pulsed Laser Deposition

Z. Z. Tang, L. Zhang, R. K. Singh, D. Wright, T. Peshek, T. Gessert, T. J. Coutts, M. Van Schilfgaarde, N. Newman

Research output: Contribution to conferencePaperpeer-review

2 Scopus Citations


We have characterized the properties of chalcopyrite ZnGeAs2 thin films produced over a wide range of growth conditions using pulsed laser deposition. By using a Zn-enriched target, stoichiometric films could be produced up to a substrate temperature of 315° C; above which the films were Zn and As deficient. Optical absorption measurements indicate that bandgap of the ZnGeAs2 thin films is direct with a value of -1.15 eV. Hot point probe indicate that the as-deposited and annealed thin films are both p-type. Hall measurements confirm this and also indicate that the carrier mobility, μp, is over 50 cm2/V·sec in the 600° C annealed samples. Channeling Rutherford Backscattering Spectroscopy (RBS) indicates that the structurally best films are achieved after 450° C annealing with a channeling yield, χmin, of 500%. Our results, in combination with the observation that the constituents are abundant elements, suggest that ZnGeAs2 is an ideal candidate for photovoltaic applications.

Original languageAmerican English
Number of pages3
StatePublished - 2009
Externally publishedYes
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: 7 Jun 200912 Jun 2009


Conference2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/TerritoryUnited States
CityPhiladelphia, PA

NREL Publication Number

  • NREL/CP-520-48027


  • photovoltaic
  • semiconductors
  • solar cells


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