Characterization Survey of GaxIn1-xAs/InAsyP1-y Double Heterostructures and InAsyP1-y Multilayers Grown on InP

S. P. Ahrenkiel; M. W. Wanlass; J. J. Carapella; L. M. Gedvilas; B. M. Keyes; R. K. Ahrenkiel; H. R. Moutinho

doi:10.1007/s11664-004-0178-7

Characterization Survey of GaxIn1-xAs/InAsyP1-y Double Heterostructures and InAsyP1-y Multilayers Grown on InP

S. P. Ahrenkiel, M. W. Wanlass, J. J. Carapella, L. M. Gedvilas, B. M. Keyes, R. K. Ahrenkiel, H. R. Moutinho

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

20 Scopus Citations

Abstract

Low-bandgap, lattice-mismatched Ga_xIn_1-xAs (GaInAs) grown using InAs_yP_1-y (InAsP) compositional-step grades on InP is a primary choice for light-absorbing, active layers in high-efficiency thermophotovoltaic (TPV) devices. The GaInAs/InAsP double heterostructures (DHs) show exceptional minority carrier lifetimes of up to several microseconds. We have performed a characterization survey of 0.4-0.6-eV GaInAs/InAsP DHs using a variety of techniques, including transmission electron microscopy (TEM). Dislocations are rarely observed to thread into the GaInAs active layers from the InAsP buffer layers that terminate the graded regions. Nearly complete strain relaxation occurs in buried regions of the InAsP grades. The buffer-layer strain prior to deposition of the active layer is virtually independent of the net misfit. Foreknowledge of this buffer-layer strain is essential to correctly lattice match the buffer to the GaInAs active layer.

Original language	American English
Pages (from-to)	185-193
Number of pages	9
Journal	Journal of Electronic Materials
Volume	33
Issue number	3
DOIs	https://doi.org/10.1007/s11664-004-0178-7 https://doi.org/10.1007/s11664-004-0178-7
State	Published - 2004

NREL Publication Number

NREL/JA-520-33029

Keywords

Heteroepitaxy
InP
Lattice mismatch
Transmission electron microscopy (TEM)
X-ray diffraction (XRD)

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Ahrenkiel, S. P., Wanlass, M. W., Carapella, J. J., Gedvilas, L. M., Keyes, B. M., Ahrenkiel, R. K., & Moutinho, H. R. (2004). Characterization Survey of GaxIn1-xAs/InAsyP1-y Double Heterostructures and InAsyP1-y Multilayers Grown on InP. Journal of Electronic Materials, 33(3), 185-193. https://doi.org/10.1007/s11664-004-0178-7, https://doi.org/10.1007/s11664-004-0178-7

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abstract = "Low-bandgap, lattice-mismatched GaxIn1-xAs (GaInAs) grown using InAsyP1-y (InAsP) compositional-step grades on InP is a primary choice for light-absorbing, active layers in high-efficiency thermophotovoltaic (TPV) devices. The GaInAs/InAsP double heterostructures (DHs) show exceptional minority carrier lifetimes of up to several microseconds. We have performed a characterization survey of 0.4-0.6-eV GaInAs/InAsP DHs using a variety of techniques, including transmission electron microscopy (TEM). Dislocations are rarely observed to thread into the GaInAs active layers from the InAsP buffer layers that terminate the graded regions. Nearly complete strain relaxation occurs in buried regions of the InAsP grades. The buffer-layer strain prior to deposition of the active layer is virtually independent of the net misfit. Foreknowledge of this buffer-layer strain is essential to correctly lattice match the buffer to the GaInAs active layer.",

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AU - Ahrenkiel, S. P.

AU - Wanlass, M. W.

AU - Carapella, J. J.

AU - Gedvilas, L. M.

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AU - Ahrenkiel, R. K.

AU - Moutinho, H. R.

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AB - Low-bandgap, lattice-mismatched GaxIn1-xAs (GaInAs) grown using InAsyP1-y (InAsP) compositional-step grades on InP is a primary choice for light-absorbing, active layers in high-efficiency thermophotovoltaic (TPV) devices. The GaInAs/InAsP double heterostructures (DHs) show exceptional minority carrier lifetimes of up to several microseconds. We have performed a characterization survey of 0.4-0.6-eV GaInAs/InAsP DHs using a variety of techniques, including transmission electron microscopy (TEM). Dislocations are rarely observed to thread into the GaInAs active layers from the InAsP buffer layers that terminate the graded regions. Nearly complete strain relaxation occurs in buried regions of the InAsP grades. The buffer-layer strain prior to deposition of the active layer is virtually independent of the net misfit. Foreknowledge of this buffer-layer strain is essential to correctly lattice match the buffer to the GaInAs active layer.

KW - Heteroepitaxy

KW - InP

KW - Lattice mismatch

KW - Transmission electron microscopy (TEM)

KW - X-ray diffraction (XRD)

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Characterization Survey of GaxIn1-xAs/InAsyP1-y Double Heterostructures and InAsyP1-y Multilayers Grown on InP

Abstract

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Keywords

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