Charge Carrier Dynamics and Recombination in Graded Band Gap CuIn1-xGaxSe2 Polycrystalline Thin-Film Photovoltaic Solar Cell Absorbers

Darius Kuciauskas; Jian V. Li; Miguel A. Contreras; Joel Pankow; Patricia Dippo; Matthew Young; Lorelle M. Mansfield; Rommel Noufi; Dean Levi

doi:10.1063/1.4825211

Charge Carrier Dynamics and Recombination in Graded Band Gap CuIn1-xGaxSe2 Polycrystalline Thin-Film Photovoltaic Solar Cell Absorbers

Darius Kuciauskas, Jian V. Li, Miguel A. Contreras, Joel Pankow, Patricia Dippo, Matthew Young, Lorelle M. Mansfield, Rommel Noufi, Dean Levi

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

36 Scopus Citations

Abstract

We report the results of spectroscopic time-resolved photoluminescence (TRPL) analysis for polycrystalline CuIn_1-xGa_xSe ₂ (CIGS) films. On the <5 ns time scale, we investigated minority carrier spatial redistribution from the initial absorption profile near the surface of the films to the conduction band minimum. Based on these data, the estimated minority carrier mobility is 75-230 cm²V^-1 s^-1. Full TRPL decays were analyzed using models for donor-acceptor pair (DAP) recombination. We estimated that the concentration of DAP recombination centers was 5 × 10¹⁵-10¹⁷ cm ^-3. Data also show that Shockley-Reed-Hall and surface recombination are not significant for polycrystalline CIGS absorbers used in high-efficiency photovoltaic solar cells.

Original language	American English
Article number	154505
Number of pages	6
Journal	Journal of Applied Physics
Volume	114
Issue number	15
DOIs	https://doi.org/10.1063/1.4825211 https://doi.org/10.1063/1.4825211
State	Published - 21 Oct 2013

NREL Publication Number

NREL/JA-5200-59036

Keywords

photovoltaic
polycrystalline
PV
solar
solar cell
thin-film

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Kuciauskas, D., Li, J. V., Contreras, M. A., Pankow, J., Dippo, P., Young, M., Mansfield, L. M., Noufi, R., & Levi, D. (2013). Charge Carrier Dynamics and Recombination in Graded Band Gap CuIn1-xGaxSe2 Polycrystalline Thin-Film Photovoltaic Solar Cell Absorbers. Journal of Applied Physics, 114(15), Article 154505. https://doi.org/10.1063/1.4825211, https://doi.org/10.1063/1.4825211

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title = "Charge Carrier Dynamics and Recombination in Graded Band Gap CuIn1-xGaxSe2 Polycrystalline Thin-Film Photovoltaic Solar Cell Absorbers",

abstract = "We report the results of spectroscopic time-resolved photoluminescence (TRPL) analysis for polycrystalline CuIn1-xGaxSe 2 (CIGS) films. On the <5 ns time scale, we investigated minority carrier spatial redistribution from the initial absorption profile near the surface of the films to the conduction band minimum. Based on these data, the estimated minority carrier mobility is 75-230 cm2V-1 s-1. Full TRPL decays were analyzed using models for donor-acceptor pair (DAP) recombination. We estimated that the concentration of DAP recombination centers was 5 × 1015-1017 cm -3. Data also show that Shockley-Reed-Hall and surface recombination are not significant for polycrystalline CIGS absorbers used in high-efficiency photovoltaic solar cells.",

keywords = "photovoltaic, polycrystalline, PV, solar, solar cell, thin-film",

author = "Darius Kuciauskas and Li, {Jian V.} and Contreras, {Miguel A.} and Joel Pankow and Patricia Dippo and Matthew Young and Mansfield, {Lorelle M.} and Rommel Noufi and Dean Levi",

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AU - Kuciauskas, Darius

AU - Li, Jian V.

AU - Contreras, Miguel A.

AU - Pankow, Joel

AU - Dippo, Patricia

AU - Young, Matthew

AU - Mansfield, Lorelle M.

AU - Noufi, Rommel

AU - Levi, Dean

PY - 2013/10/21

Y1 - 2013/10/21

N2 - We report the results of spectroscopic time-resolved photoluminescence (TRPL) analysis for polycrystalline CuIn1-xGaxSe 2 (CIGS) films. On the <5 ns time scale, we investigated minority carrier spatial redistribution from the initial absorption profile near the surface of the films to the conduction band minimum. Based on these data, the estimated minority carrier mobility is 75-230 cm2V-1 s-1. Full TRPL decays were analyzed using models for donor-acceptor pair (DAP) recombination. We estimated that the concentration of DAP recombination centers was 5 × 1015-1017 cm -3. Data also show that Shockley-Reed-Hall and surface recombination are not significant for polycrystalline CIGS absorbers used in high-efficiency photovoltaic solar cells.

AB - We report the results of spectroscopic time-resolved photoluminescence (TRPL) analysis for polycrystalline CuIn1-xGaxSe 2 (CIGS) films. On the <5 ns time scale, we investigated minority carrier spatial redistribution from the initial absorption profile near the surface of the films to the conduction band minimum. Based on these data, the estimated minority carrier mobility is 75-230 cm2V-1 s-1. Full TRPL decays were analyzed using models for donor-acceptor pair (DAP) recombination. We estimated that the concentration of DAP recombination centers was 5 × 1015-1017 cm -3. Data also show that Shockley-Reed-Hall and surface recombination are not significant for polycrystalline CIGS absorbers used in high-efficiency photovoltaic solar cells.

KW - photovoltaic

KW - polycrystalline

KW - PV

KW - solar

KW - solar cell

KW - thin-film

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VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Charge Carrier Dynamics and Recombination in Graded Band Gap CuIn1-xGaxSe2 Polycrystalline Thin-Film Photovoltaic Solar Cell Absorbers

Abstract

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Keywords

UN SDGs

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