Charge Carrier Recombination Centers in High-Purity, Dislocation-Free, Float-Zoned Silicon Due to Growth-Induced Microdefects

NREL

    Research output: Contribution to conference › Paper

    Original languageAmerican English
    StatePublished - 1977
    EventEighth American Conference on Crystal Growth - Vail, Colorado
    Duration: 15 Jul 1990 → 20 Jul 1990

    Conference

    ConferenceEighth American Conference on Crystal Growth
    CityVail, Colorado
    Period15/07/90 → 20/07/90

    NREL Publication Number

    • ACNR/CP-212-12464

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