Charge Modulation Spectra in Phosphorus-Doped a-Si:H

J. Lyou, N. Kopidakis, E. A. Schiff

Research output: Contribution to journalArticlepeer-review

3 Scopus Citations


We discuss models for the infrared spectrum peaked at 0.8 eV reported in voltage-modulated optical absorption measurements on a-Si:H based diodes. We associate this spectrum with interface charge modulation of the optical properties of the phosphorus-doped a-Si:H used as one electrode. We propose that the spectrum originates with the internal optical transitions of a complex incorporating four-fold coordinated phosphorus and a dangling bond. We discuss prior evidence against complexing, and suggest further experiments.

Original languageAmerican English
Pages (from-to)227-231
Number of pages5
JournalJournal of Non-Crystalline Solids
StatePublished - 2000
Externally publishedYes
Event18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) - Snowbird, UT, United States
Duration: 23 Aug 199927 Aug 1999

Bibliographical note

Work performed by Syracuse University, Syracuse, New York

NREL Publication Number

  • NREL/JA-520-28659


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