Charge Transfer at Illuminated Semiconductor-Electrolyte Interfaces

A. J. Nozik; D. S. Boudreaux; R. R. Chance; Ferd Williams

doi:10.1021/ba-1980-0184.ch009

Charge Transfer at Illuminated Semiconductor-Electrolyte Interfaces

A. J. Nozik, D. S. Boudreaux, R. R. Chance, Ferd Williams

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Research output: Contribution to conference › Paper › peer-review

15 Scopus Citations

Abstract

A new heterojunction model for the semiconductor-electrolyte interface is presented that considers the electrolyte as a doped semiconductor and that predicts that hot photogenerated minority carriers can be injected into the electrolyte. Preliminary calculations are presented in support of the hot carrier injection hypothesis. Recent experimental results on the photoenhanced reduction of N//2 on p-GaP cathodes are discussed and they appear to provide experimental evidence for hot electron injection. The importance of hot carrier injection for photoelectrochemical cells is also discussed.

Original language	American English
Pages	155-171
Number of pages	17
DOIs	https://doi.org/10.1021/ba-1980-0184.ch009 https://doi.org/10.1021/ba-1980-0184.ch009
State	Published - 1980
Externally published	Yes
Event	Adv Chem Ser 184, Interfacial Photoprocesses, Energy Convers and Synth. Based on Symp at the 176th Meet of the ACS - Miami Beach, FL, USA Duration: 11 Sep 1978 → 13 Sep 1978

Conference

Conference	Adv Chem Ser 184, Interfacial Photoprocesses, Energy Convers and Synth. Based on Symp at the 176th Meet of the ACS
City	Miami Beach, FL, USA
Period	11/09/78 → 13/09/78

NREL Publication Number

ACNR/CP-236-3536

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Nozik, A. J., Boudreaux, D. S., Chance, R. R., & Williams, F. (1980). Charge Transfer at Illuminated Semiconductor-Electrolyte Interfaces. 155-171. Paper presented at Adv Chem Ser 184, Interfacial Photoprocesses, Energy Convers and Synth. Based on Symp at the 176th Meet of the ACS, Miami Beach, FL, USA. https://doi.org/10.1021/ba-1980-0184.ch009, https://doi.org/10.1021/ba-1980-0184.ch009

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title = "Charge Transfer at Illuminated Semiconductor-Electrolyte Interfaces",

abstract = "A new heterojunction model for the semiconductor-electrolyte interface is presented that considers the electrolyte as a doped semiconductor and that predicts that hot photogenerated minority carriers can be injected into the electrolyte. Preliminary calculations are presented in support of the hot carrier injection hypothesis. Recent experimental results on the photoenhanced reduction of N//2 on p-GaP cathodes are discussed and they appear to provide experimental evidence for hot electron injection. The importance of hot carrier injection for photoelectrochemical cells is also discussed.",

author = "Nozik, {A. J.} and Boudreaux, {D. S.} and Chance, {R. R.} and Ferd Williams",

year = "1980",

doi = "10.1021/ba-1980-0184.ch009",

language = "American English",

pages = "155--171",

note = "Adv Chem Ser 184, Interfacial Photoprocesses, Energy Convers and Synth. Based on Symp at the 176th Meet of the ACS ; Conference date: 11-09-1978 Through 13-09-1978",

}

Nozik, AJ, Boudreaux, DS, Chance, RR & Williams, F 1980, 'Charge Transfer at Illuminated Semiconductor-Electrolyte Interfaces', Paper presented at Adv Chem Ser 184, Interfacial Photoprocesses, Energy Convers and Synth. Based on Symp at the 176th Meet of the ACS, Miami Beach, FL, USA, 11/09/78 - 13/09/78 pp. 155-171. https://doi.org/10.1021/ba-1980-0184.ch009, https://doi.org/10.1021/ba-1980-0184.ch009

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AU - Nozik, A. J.

AU - Boudreaux, D. S.

AU - Chance, R. R.

AU - Williams, Ferd

PY - 1980

Y1 - 1980

N2 - A new heterojunction model for the semiconductor-electrolyte interface is presented that considers the electrolyte as a doped semiconductor and that predicts that hot photogenerated minority carriers can be injected into the electrolyte. Preliminary calculations are presented in support of the hot carrier injection hypothesis. Recent experimental results on the photoenhanced reduction of N//2 on p-GaP cathodes are discussed and they appear to provide experimental evidence for hot electron injection. The importance of hot carrier injection for photoelectrochemical cells is also discussed.

AB - A new heterojunction model for the semiconductor-electrolyte interface is presented that considers the electrolyte as a doped semiconductor and that predicts that hot photogenerated minority carriers can be injected into the electrolyte. Preliminary calculations are presented in support of the hot carrier injection hypothesis. Recent experimental results on the photoenhanced reduction of N//2 on p-GaP cathodes are discussed and they appear to provide experimental evidence for hot electron injection. The importance of hot carrier injection for photoelectrochemical cells is also discussed.

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DO - 10.1021/ba-1980-0184.ch009

M3 - Paper

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T2 - Adv Chem Ser 184, Interfacial Photoprocesses, Energy Convers and Synth. Based on Symp at the 176th Meet of the ACS

Y2 - 11 September 1978 through 13 September 1978

ER -

Charge Transfer at Illuminated Semiconductor-Electrolyte Interfaces

Abstract

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