Charge Trapping Properties of Ge Nanocrystals Grown via Solid-State Dewetting

I. Jadli, M. Aouassa, S. Johnston, H. Maaref, L. Favre, A. Ronda, I. Berbezier, R. M'ghaieth

Research output: Contribution to journalArticlepeer-review

Abstract

In the present work, we report on the charge trapping properties of Germanium Nanocrystals (Ge NCs) self assembled on SiO2 thin layer for promising applications in next-generation non volatile memory by the means of Deep Level Transient Spectroscopy (DLTS) and high frequency C-V method. The Ge NCs were grown via dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing and passivated with silicon before SiO2 capping. The role of the surface passivation is to reduce the electrical defect density at the Ge NCs-SiO2 interface. The presence of the Ge NCs in the oxide of the MOS capacitors strongly affects the C-V characteristics and increases the accumulation capacitance, causes a negative flat band voltage (VFB) shift. The DLTS has been used to study the individual Ge NCs as a single point deep level defect in the oxide. DLTS reveals two main features: the first electron traps around 255 K could correspond to dangling bonds at the Si/SiO2 interface and the second, at high-temperature (>300 K) response, could be originated from minority carrier generation in Ge NCs.

Original languageAmerican English
Pages (from-to)139-144
Number of pages6
JournalJournal of Alloys and Compounds
Volume756
DOIs
StatePublished - 2018

Bibliographical note

Publisher Copyright:
© 2018 Elsevier B.V.

NREL Publication Number

  • NREL/JA-5K00-71687

Keywords

  • Dewetting
  • Ge NCs
  • Nonvolatile memory

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