Charged Dangling Bonds: Key to Electronic Transport, Recombination and Metastability in Hydrogenated Amorphous Silicon

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	639-641
Number of pages	3
Journal	Journal of Non-Crystalline Solids
Volume	114
DOIs	https://doi.org/10.1016/0022-3093(89)90675-3
State	Published - 1989

NREL Publication Number

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title = "Charged Dangling Bonds: Key to Electronic Transport, Recombination and Metastability in Hydrogenated Amorphous Silicon",

author = "NREL",

year = "1989",

doi = "10.1016/0022-3093(89)90675-3",

language = "American English",

volume = "114",

pages = "639--641",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Charged Dangling Bonds: Key to Electronic Transport, Recombination and Metastability in Hydrogenated Amorphous Silicon

AU - NREL, null

PY - 1989

Y1 - 1989

U2 - 10.1016/0022-3093(89)90675-3

DO - 10.1016/0022-3093(89)90675-3

M3 - Article

SN - 0022-3093

VL - 114

SP - 639

EP - 641

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

ER -