Chemical and Electronic Surface Structure of 20%-Efficient Cu(in,Ga)Se2 Thin Film Solar Cell Absorbers

M. Bär, I. Repins, M. A. Contreras, L. Weinhardt, R. Noufi, C. Heske

Research output: Contribution to journalArticlepeer-review

68 Scopus Citations

Abstract

The chemical and electronic surface structure of 20%-efficient Cu (In,Ga) Se2 thin film solar cell absorbers was investigated as a function of deposition process termination (i.e., ending the growth process in absence of either Ga or In). In addition to the expected In (Ga) enrichment, direct and inverse photoemission reveal a decreased Cu surface content and a larger surface band gap for the "In-terminated" absorber.

Original languageAmerican English
Article numberArticle No. 052106
Number of pages3
JournalApplied Physics Letters
Volume95
Issue number5
DOIs
StatePublished - 2009

NREL Publication Number

  • NREL/JA-520-46620

Keywords

  • copper
  • photoemission
  • surface photoemission
  • surface structure
  • X-ray photoelectron spectroscopy

Fingerprint

Dive into the research topics of 'Chemical and Electronic Surface Structure of 20%-Efficient Cu(in,Ga)Se2 Thin Film Solar Cell Absorbers'. Together they form a unique fingerprint.

Cite this