Abstract
The chemical and electronic surface structure of 20%-efficient Cu (In,Ga) Se2 thin film solar cell absorbers was investigated as a function of deposition process termination (i.e., ending the growth process in absence of either Ga or In). In addition to the expected In (Ga) enrichment, direct and inverse photoemission reveal a decreased Cu surface content and a larger surface band gap for the "In-terminated" absorber.
Original language | American English |
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Article number | Article No. 052106 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 95 |
Issue number | 5 |
DOIs | |
State | Published - 2009 |
NREL Publication Number
- NREL/JA-520-46620
Keywords
- copper
- photoemission
- surface photoemission
- surface structure
- X-ray photoelectron spectroscopy