Chemical, Compositional, and Electrical Properties of Semiconductor Grain Boundaries

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The chemical, compositional, and electrical properties of grain boundaries in polycrystalline Si are studied. Segregated impurities localized on grain boundaries are mapped using high-resolution AES in conjunction with an in situ fracture technique. The electrical activity of these impurities is evaluated within the grain boundary plane using a surface potential measurement method. The effects of illumination on the barrier potential and minority-carrier lifetimes of clean and intentionally doped (Al, Ti) grain boundaries are presented. The effects of annealing on grain boundaries containing various impurities are discussed. SIMS profiling with complementary minority-carrier lifetime data provide evidence for the segregation of oxygen during high-temperature (900 degree C) annealing and identifies this mechanism as the probable source for electrical activation of such grain boundaries.

Original languageAmerican English
Pages (from-to)423-429
Number of pages7
JournalJournal of vacuum science & technology
Issue number3
StatePublished - 1981
Externally publishedYes
EventProc of the Natl Symp of the Am Vac Soc, Pt 1 - Anaheim, Calif, USA
Duration: 2 Nov 19816 Nov 1981

NREL Publication Number

  • ACNR/JA-213-3734


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