Abstract
The chemical, compositional, and electrical properties of grain boundaries in polycrystalline Si are studied. Segregated impurities localized on grain boundaries are mapped using high-resolution AES in conjunction with an in situ fracture technique. The electrical activity of these impurities is evaluated within the grain boundary plane using a surface potential measurement method. The effects of illumination on the barrier potential and minority-carrier lifetimes of clean and intentionally doped (Al, Ti) grain boundaries are presented. The effects of annealing on grain boundaries containing various impurities are discussed. SIMS profiling with complementary minority-carrier lifetime data provide evidence for the segregation of oxygen during high-temperature (900 degree C) annealing and identifies this mechanism as the probable source for electrical activation of such grain boundaries.
| Original language | American English |
|---|---|
| Pages (from-to) | 423-429 |
| Number of pages | 7 |
| Journal | Journal of vacuum science & technology |
| Volume | 20 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1981 |
| Externally published | Yes |
| Event | Proc of the Natl Symp of the Am Vac Soc, Pt 1 - Anaheim, Calif, USA Duration: 2 Nov 1981 → 6 Nov 1981 |
NREL Publication Number
- ACNR/JA-213-3734