Chemical, Optical, Vibrational and Luminescent Properties of Hydrogenated Silicon-Rich Oxynitride Films

Sandeep Kohli; Jeremy A. Theil; Patricia C. Dippo; Richard K. Ahrenkiel; Christopher D. Rithner; Peter K. Dorhout

doi:10.1016/j.tsf.2004.07.054

Chemical, Optical, Vibrational and Luminescent Properties of Hydrogenated Silicon-Rich Oxynitride Films

Sandeep Kohli, Jeremy A. Theil, Patricia C. Dippo, Richard K. Ahrenkiel, Christopher D. Rithner, Peter K. Dorhout

Materials Science

Research output: Contribution to journal › Article › peer-review

13 Scopus Citations

Abstract

X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Fourier transform infrared and room temperature photoluminescence spectroscopy has been used to investigate the chemical, optical, vibrational and luminescent properties of Plasma Enhanced Chemical Vapor Deposited SiO_xN _y/H (0.17≤x≤0.96; 0.07≤y≤0.27), hydrogenated silicon-rich oxynitride (SRON). The linear dependence of the refractive index of the SRON films on the O/Si ratio was established. The photoluminescence from the SRON films were attributed to the embedded amorphous silicon clusters in the films. The dependence of luminescence maximum values on the O/Si and O/N ratios has been explored. We postulate that at O/Si ratio of 0.18 and an O/N ratio of 2.0 (SiO_0.18N_0.09) the film underwent a transformation from silicon-rich oxynitride to a-Si/H film with oxygen and nitrogen impurities.

Original language	American English
Pages (from-to)	89-97
Number of pages	9
Journal	Thin Solid Films
Volume	473
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2004.07.054 https://doi.org/10.1016/j.tsf.2004.07.054
State	Published - 2005

NREL Publication Number

NREL/JA-520-37873

Keywords

Ellipsometry
Photoluminescence
Silicon-rich silicon oxynitride
Thin film
XPS

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@article{e531caf2f99842ef9efb49c2f4b1fc88,

title = "Chemical, Optical, Vibrational and Luminescent Properties of Hydrogenated Silicon-Rich Oxynitride Films",

abstract = "X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Fourier transform infrared and room temperature photoluminescence spectroscopy has been used to investigate the chemical, optical, vibrational and luminescent properties of Plasma Enhanced Chemical Vapor Deposited SiOxN y/H (0.17≤x≤0.96; 0.07≤y≤0.27), hydrogenated silicon-rich oxynitride (SRON). The linear dependence of the refractive index of the SRON films on the O/Si ratio was established. The photoluminescence from the SRON films were attributed to the embedded amorphous silicon clusters in the films. The dependence of luminescence maximum values on the O/Si and O/N ratios has been explored. We postulate that at O/Si ratio of 0.18 and an O/N ratio of 2.0 (SiO0.18N0.09) the film underwent a transformation from silicon-rich oxynitride to a-Si/H film with oxygen and nitrogen impurities.",

keywords = "Ellipsometry, Photoluminescence, Silicon-rich silicon oxynitride, Thin film, XPS",

author = "Sandeep Kohli and Theil, {Jeremy A.} and Dippo, {Patricia C.} and Ahrenkiel, {Richard K.} and Rithner, {Christopher D.} and Dorhout, {Peter K.}",

year = "2005",

doi = "10.1016/j.tsf.2004.07.054",

language = "American English",

volume = "473",

pages = "89--97",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Chemical, Optical, Vibrational and Luminescent Properties of Hydrogenated Silicon-Rich Oxynitride Films

AU - Kohli, Sandeep

AU - Theil, Jeremy A.

AU - Dippo, Patricia C.

AU - Ahrenkiel, Richard K.

AU - Rithner, Christopher D.

AU - Dorhout, Peter K.

PY - 2005

Y1 - 2005

N2 - X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Fourier transform infrared and room temperature photoluminescence spectroscopy has been used to investigate the chemical, optical, vibrational and luminescent properties of Plasma Enhanced Chemical Vapor Deposited SiOxN y/H (0.17≤x≤0.96; 0.07≤y≤0.27), hydrogenated silicon-rich oxynitride (SRON). The linear dependence of the refractive index of the SRON films on the O/Si ratio was established. The photoluminescence from the SRON films were attributed to the embedded amorphous silicon clusters in the films. The dependence of luminescence maximum values on the O/Si and O/N ratios has been explored. We postulate that at O/Si ratio of 0.18 and an O/N ratio of 2.0 (SiO0.18N0.09) the film underwent a transformation from silicon-rich oxynitride to a-Si/H film with oxygen and nitrogen impurities.

AB - X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Fourier transform infrared and room temperature photoluminescence spectroscopy has been used to investigate the chemical, optical, vibrational and luminescent properties of Plasma Enhanced Chemical Vapor Deposited SiOxN y/H (0.17≤x≤0.96; 0.07≤y≤0.27), hydrogenated silicon-rich oxynitride (SRON). The linear dependence of the refractive index of the SRON films on the O/Si ratio was established. The photoluminescence from the SRON films were attributed to the embedded amorphous silicon clusters in the films. The dependence of luminescence maximum values on the O/Si and O/N ratios has been explored. We postulate that at O/Si ratio of 0.18 and an O/N ratio of 2.0 (SiO0.18N0.09) the film underwent a transformation from silicon-rich oxynitride to a-Si/H film with oxygen and nitrogen impurities.

KW - Ellipsometry

KW - Photoluminescence

KW - Silicon-rich silicon oxynitride

KW - Thin film

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=9744279752&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2004.07.054

DO - 10.1016/j.tsf.2004.07.054

M3 - Article

AN - SCOPUS:9744279752

SN - 0040-6090

VL - 473

SP - 89

EP - 97

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Chemical, Optical, Vibrational and Luminescent Properties of Hydrogenated Silicon-Rich Oxynitride Films

Abstract

NREL Publication Number

Keywords

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