Chemical Trends in Ground- and Excited-State Properties of Interstitial 3d Impurities in Silicon

Research output: Contribution to journal › Article

NREL Publication Number

@article{339b63766a9a4c5b93b928372f867810,

title = "Chemical Trends in Ground- and Excited-State Properties of Interstitial 3d Impurities in Silicon",

author = "NREL",

year = "1985",

doi = "10.1103/PhysRevB.31.8317",

language = "American English",

volume = "31",

pages = "8317--8320",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Institute of Physics",

number = "12",

}