Chemical Trends of Defect Formation and Doping Limit in II-VI Semiconductors: The Case of CdTe: Article No. 155211

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	10
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	66
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.66.155211
State	Published - 2002

NREL Publication Number

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title = "Chemical Trends of Defect Formation and Doping Limit in II-VI Semiconductors: The Case of CdTe: Article No. 155211",

author = "NREL",

year = "2002",

doi = "10.1103/PhysRevB.66.155211",

language = "American English",

volume = "66",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "15",

}

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T1 - Chemical Trends of Defect Formation and Doping Limit in II-VI Semiconductors: The Case of CdTe

T2 - Article No. 155211

AU - NREL, null

PY - 2002

Y1 - 2002

U2 - 10.1103/PhysRevB.66.155211

DO - 10.1103/PhysRevB.66.155211

M3 - Article

SN - 1098-0121

VL - 66

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 15

ER -