Abstract
The effort to fabricate p-type ZnO films was performed by reacting DEZ with O2 and/or NO using MOCVD. Results indicated that it is possible to dope ZnO films with N and without using high-temperature or plasma processing. The remarkably high N concentration level occurred when the films were formed using NO as both oxidant and dopant source.
Original language | American English |
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Pages (from-to) | 1342-1346 |
Number of pages | 5 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 21 |
Issue number | 4 |
DOIs | |
State | Published - 2003 |
NREL Publication Number
- NREL/JA-520-34996