Chemical Vapor Deposition-Formed p-Type ZnO Thin Films

X. Li, Y. Yan, T. A. Gessert, C. L. Perkins, D. Young, C. DeHart, M. Young, T. J. Coutts

Research output: Contribution to journalArticlepeer-review

151 Scopus Citations


The effort to fabricate p-type ZnO films was performed by reacting DEZ with O2 and/or NO using MOCVD. Results indicated that it is possible to dope ZnO films with N and without using high-temperature or plasma processing. The remarkably high N concentration level occurred when the films were formed using NO as both oxidant and dopant source.

Original languageAmerican English
Pages (from-to)1342-1346
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4
StatePublished - 2003

NREL Publication Number

  • NREL/JA-520-34996


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