Chemical Vapor Deposition-Formed p-Type ZnO Thin Films

X. Li; Y. Yan; T. A. Gessert; C. L. Perkins; D. Young; C. DeHart; M. Young; T. J. Coutts

doi:10.1116/1.1584036

Chemical Vapor Deposition-Formed p-Type ZnO Thin Films

X. Li
, Y. Yan
, T. A. Gessert
, C. L. Perkins
, D. Young
, C. DeHart
, M. Young
, T. J. Coutts

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

153 Scopus Citations

Abstract

The effort to fabricate p-type ZnO films was performed by reacting DEZ with O₂ and/or NO using MOCVD. Results indicated that it is possible to dope ZnO films with N and without using high-temperature or plasma processing. The remarkably high N concentration level occurred when the films were formed using NO as both oxidant and dopant source.

Original language	American English
Pages (from-to)	1342-1346
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	21
Issue number	4
DOIs	https://doi.org/10.1116/1.1584036 https://doi.org/10.1116/1.1584036
State	Published - 2003

NLR Publication Number

NREL/JA-520-34996

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title = "Chemical Vapor Deposition-Formed p-Type ZnO Thin Films",

abstract = "The effort to fabricate p-type ZnO films was performed by reacting DEZ with O2 and/or NO using MOCVD. Results indicated that it is possible to dope ZnO films with N and without using high-temperature or plasma processing. The remarkably high N concentration level occurred when the films were formed using NO as both oxidant and dopant source.",

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AU - Li, X.

AU - Yan, Y.

AU - Gessert, T. A.

AU - Perkins, C. L.

AU - Young, D.

AU - DeHart, C.

AU - Young, M.

AU - Coutts, T. J.

PY - 2003

Y1 - 2003

N2 - The effort to fabricate p-type ZnO films was performed by reacting DEZ with O2 and/or NO using MOCVD. Results indicated that it is possible to dope ZnO films with N and without using high-temperature or plasma processing. The remarkably high N concentration level occurred when the films were formed using NO as both oxidant and dopant source.

AB - The effort to fabricate p-type ZnO films was performed by reacting DEZ with O2 and/or NO using MOCVD. Results indicated that it is possible to dope ZnO films with N and without using high-temperature or plasma processing. The remarkably high N concentration level occurred when the films were formed using NO as both oxidant and dopant source.

UR - https://www.scopus.com/pages/publications/0042029714

U2 - 10.1116/1.1584036

DO - 10.1116/1.1584036

M3 - Article

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SN - 0734-2101

VL - 21

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EP - 1346

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

ER -

Chemical Vapor Deposition-Formed p-Type ZnO Thin Films

Abstract

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