Chemical Vapor Deposition of Doped TiO2 Thin Films

Sarah R. Kurtz, Roy G. Gordon

Research output: Contribution to journalArticlepeer-review

72 Scopus Citations


Niobium-, tantalum- and fluorine-doped TiO2 films were made by atmospheric pressure chemical vapor deposition from titanium alkoxides mixed with niobium ethoxide, tantalum ethoxide and t-butyl fluoride respectively. 4% H2 in N2 was used as the carrier gas and the deposition temperatures were in the range 400-600°C. The resistivities of the films increased dramatically with film thickness. For highly doped films 1 μm thick resistivities as low as 0.01 Ω cm were achieved.

Original languageAmerican English
Pages (from-to)167-176
Number of pages10
JournalThin Solid Films
Issue number2
StatePublished - 1987
Externally publishedYes

Bibliographical note

Work performed by Department of Chemistry, Harvard University, Cambridge, Massachusetts

NREL Publication Number

  • ACNR/JA-9558


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