Chemical Vapor Deposition of Doped TiO2 Thin Films

Sarah R. Kurtz, Roy G. Gordon

Research output: Contribution to journalArticlepeer-review

72 Scopus Citations

Abstract

Niobium-, tantalum- and fluorine-doped TiO2 films were made by atmospheric pressure chemical vapor deposition from titanium alkoxides mixed with niobium ethoxide, tantalum ethoxide and t-butyl fluoride respectively. 4% H2 in N2 was used as the carrier gas and the deposition temperatures were in the range 400-600°C. The resistivities of the films increased dramatically with film thickness. For highly doped films 1 μm thick resistivities as low as 0.01 Ω cm were achieved.

Original languageAmerican English
Pages (from-to)167-176
Number of pages10
JournalThin Solid Films
Volume147
Issue number2
DOIs
StatePublished - 1987
Externally publishedYes

Bibliographical note

Work performed by Department of Chemistry, Harvard University, Cambridge, Massachusetts

NREL Publication Number

  • ACNR/JA-9558

Fingerprint

Dive into the research topics of 'Chemical Vapor Deposition of Doped TiO2 Thin Films'. Together they form a unique fingerprint.

Cite this