Chemistry of Hydrogen and Arsenic Interactions at Grain Boundaries

L. L. Kazmerski

doi:10.1116/1.573983

Chemistry of Hydrogen and Arsenic Interactions at Grain Boundaries

L. L. Kazmerski

Materials Science

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6 Scopus Citations

Abstract

The incorporation of hydrogen and arsenic in silicon grain boundaries is investigated. Volume-indexed SIMS and AES are utilized for the identification of impurity species (elemental or molecular), their concentrations (quantification), and their exact spatial location (mapping). The chemistry of the interaction of the hydrogen with the ion-modified Si surface and the grain boundary is investigated for both oxygen-deficient and oxygen-rich intergrain regions. Three bonding schemes are identified, including SiH₂, SiH, and SiOH. Thermal desorption studies complement the surface analytical investigations. Arsenic segregation to grain boundaries is directly demonstrated using high spatial and depth resolution volume-indexed AES. The effects of this segregation of the band structures of these grain boundaries are discussed.

Original language	American English
Pages (from-to)	1638-1642
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	4
Issue number	3
DOIs	https://doi.org/10.1116/1.573983 https://doi.org/10.1116/1.573983
State	Published - May 1986

NREL Publication Number

ACNR/JA-213-7987

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abstract = "The incorporation of hydrogen and arsenic in silicon grain boundaries is investigated. Volume-indexed SIMS and AES are utilized for the identification of impurity species (elemental or molecular), their concentrations (quantification), and their exact spatial location (mapping). The chemistry of the interaction of the hydrogen with the ion-modified Si surface and the grain boundary is investigated for both oxygen-deficient and oxygen-rich intergrain regions. Three bonding schemes are identified, including SiH2, SiH, and SiOH. Thermal desorption studies complement the surface analytical investigations. Arsenic segregation to grain boundaries is directly demonstrated using high spatial and depth resolution volume-indexed AES. The effects of this segregation of the band structures of these grain boundaries are discussed.",

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AB - The incorporation of hydrogen and arsenic in silicon grain boundaries is investigated. Volume-indexed SIMS and AES are utilized for the identification of impurity species (elemental or molecular), their concentrations (quantification), and their exact spatial location (mapping). The chemistry of the interaction of the hydrogen with the ion-modified Si surface and the grain boundary is investigated for both oxygen-deficient and oxygen-rich intergrain regions. Three bonding schemes are identified, including SiH2, SiH, and SiOH. Thermal desorption studies complement the surface analytical investigations. Arsenic segregation to grain boundaries is directly demonstrated using high spatial and depth resolution volume-indexed AES. The effects of this segregation of the band structures of these grain boundaries are discussed.

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JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

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ER -

Chemistry of Hydrogen and Arsenic Interactions at Grain Boundaries

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