Chemistry of Hydrogen and Arsenic Interactions at Grain Boundaries

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6 Scopus Citations


The incorporation of hydrogen and arsenic in silicon grain boundaries is investigated. Volume-indexed SIMS and AES are utilized for the identification of impurity species (elemental or molecular), their concentrations (quantification), and their exact spatial location (mapping). The chemistry of the interaction of the hydrogen with the ion-modified Si surface and the grain boundary is investigated for both oxygen-deficient and oxygen-rich intergrain regions. Three bonding schemes are identified, including SiH2, SiH, and SiOH. Thermal desorption studies complement the surface analytical investigations. Arsenic segregation to grain boundaries is directly demonstrated using high spatial and depth resolution volume-indexed AES. The effects of this segregation of the band structures of these grain boundaries are discussed.

Original languageAmerican English
Pages (from-to)1638-1642
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number3
StatePublished - May 1986

NREL Publication Number

  • ACNR/JA-213-7987


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