Abstract
Due to the development of the solar energy industry, a significant increase of polysilicon feedstock (PSF) production will be required in near future. The creation of special technology of solar grade polysilicon feedstock production is an important problem. Today, semiconductor-grade polysilicon is mainly manufactured using the trichlorosilane (SiHCl3) distillation and reduction. The feed-stockfor trichlorosilane is metallurgical-grade silicon, the product of reduction of natural quartzite (silica). This polysilicon production method is characterised by high energy consumption and large amounts of wastes, containing environmentally harmful chlorine based compounds. In the former USSR the principles of industrial method for production of monosilane and polycrystalline silicon bythermal decomposition of monosilane were founded. This technology was proved in industrial scale at production of gaseous monosilane and PSF. We offered new chlorine free technology (CFT). Originality and novelty of the process were confirmed by Russian and US patents.
| Original language | American English |
|---|---|
| Number of pages | 9 |
| State | Published - 2004 |
| Event | 14th Workshop on Crystalline Silicon Solar Cells and Modules - Winter Park, Colorado Duration: 8 Aug 2004 → 11 Aug 2004 |
Conference
| Conference | 14th Workshop on Crystalline Silicon Solar Cells and Modules |
|---|---|
| City | Winter Park, Colorado |
| Period | 8/08/04 → 11/08/04 |
NREL Publication Number
- NREL/CP-520-36750
Keywords
- crystal growth
- crystalline silicon (x-Si) (c-Si)
- defects
- device process
- impurities
- materials and processes
- microelectronics
- module
- passivation
- photovoltaics (PV)
- PV
- solar cells
