Abstract
Epitaxial CdTe with high quality, low defect density, and high carrier concentration should in principle yield high-efficiency photovoltaic devices. However, insufficient effort has been given to explore the choice of substrate for high-efficiency epitaxial CdTe solar cells. In this paper, we use numerical simulations to investigate three crystalline substrates: silicon (Si), InSb, and CdTe itself. Potential problems, especially the non-ideal band alignment of Si and InSb substrates with a CdTe absorber, are found to be a limitation on cell performance. In addition, commercially available CdTe substrates have excessive series resistance leading to a FF loss, and Si has a significant lattice mismatch with CdTe, creating interfacial traps. Possible solutions to overcome the drawbacks of each substrate material are generally discussed.
Original language | American English |
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Number of pages | 4 |
DOIs | |
State | Published - 2015 |
Event | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015 |
Conference
Conference | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 |
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Country/Territory | United States |
City | New Orleans |
Period | 14/06/15 → 19/06/15 |
Bibliographical note
Publisher Copyright:© 2015 IEEE.
NREL Publication Number
- NREL/CP-5J00-64397
Keywords
- cadmium compounds
- elemental semiconductors
- epitaxial layers
- II-VI semiconductors
- indium compounds
- silicon
- solar cells