CIS Solar Cells with ZnO Buffer Layers

    Research output: Contribution to conferencePaper


    This work describes investigations of CIS solar cells with ZnO buffer layers. Studies are concentrating on determining optimum ZnO buffer layer properties that will yield the maximum ZnO/CIS solar cell efficiency. Buffer layers are grown by chemical vapor deposition (CVD) by reacting a zinc adduct with tetrahydrofuran to grow ZnO. Substrate temperatures (T/sub sub/) have been varied from 100 deg.C to 350 deg. C, with the best device performance obtained for T/sub sub/ .apprx. 225 deg C to 250 deg C. These studies were conducted with substrates obtained from Siemens Solar (CIGSS) and NREL (CIGS). ZnO/CIS solar cells were fabricated by first depositing a ZnO buffer layer, followed by deposition of a low resistivity ZnO top contact layer and a Al/Ag collector grid. Several cells have beenfabricated with an area of 0.44 cm/sup 2/ that have total area efficiencies greater than 11%. In particular, a cell was fabricated with a Siemens substrate that exhibited a total area efficiency of 11.3%, and one based on a NREL substrate that has a total area efficiency of 12%. This work has focused on determining optimum deposition parameters for CVD ZnO buffer layers. It is clear that inorder to achieve efficient ZnO/CIS cells, the buffer layer must be deposited with a high resisitivity.
    Original languageAmerican English
    Number of pages4
    StatePublished - 1996
    EventTwenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C.
    Duration: 13 May 199617 May 1996


    ConferenceTwenty Fifth IEEE Photovoltaic Specialists Conference
    CityWashington, D.C.

    Bibliographical note

    Work performed by Washington State University, Richland, Washington

    NREL Publication Number

    • NREL/CP-22436


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