CIS Solar Cells with ZnO Buffer Layers

doi:10.1109/PVSC.1996.564299

CIS Solar Cells with ZnO Buffer Layers

Research output: Contribution to conference › Paper

Abstract

This work describes investigations of CIS solar cells with ZnO buffer layers. Studies are concentrating on determining optimum ZnO buffer layer properties that will yield the maximum ZnO/CIS solar cell efficiency. Buffer layers are grown by chemical vapor deposition (CVD) by reacting a zinc adduct with tetrahydrofuran to grow ZnO. Substrate temperatures (T/sub sub/) have been varied from 100 deg.C to 350 deg. C, with the best device performance obtained for T/sub sub/ .apprx. 225 deg C to 250 deg C. These studies were conducted with substrates obtained from Siemens Solar (CIGSS) and NREL (CIGS). ZnO/CIS solar cells were fabricated by first depositing a ZnO buffer layer, followed by deposition of a low resistivity ZnO top contact layer and a Al/Ag collector grid. Several cells have beenfabricated with an area of 0.44 cm/sup 2/ that have total area efficiencies greater than 11%. In particular, a cell was fabricated with a Siemens substrate that exhibited a total area efficiency of 11.3%, and one based on a NREL substrate that has a total area efficiency of 12%. This work has focused on determining optimum deposition parameters for CVD ZnO buffer layers. It is clear that inorder to achieve efficient ZnO/CIS cells, the buffer layer must be deposited with a high resisitivity.

Original language	American English
Pages	997-1000
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1996.564299
State	Published - 1996
Event	Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996

Conference

Conference	Twenty Fifth IEEE Photovoltaic Specialists Conference
City	Washington, D.C.
Period	13/05/96 → 17/05/96

Bibliographical note

Work performed by Washington State University, Richland, Washington

NREL Publication Number

NREL/CP-22436

Access to Document

10.1109/PVSC.1996.564299

Cite this

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title = "CIS Solar Cells with ZnO Buffer Layers",

abstract = "This work describes investigations of CIS solar cells with ZnO buffer layers. Studies are concentrating on determining optimum ZnO buffer layer properties that will yield the maximum ZnO/CIS solar cell efficiency. Buffer layers are grown by chemical vapor deposition (CVD) by reacting a zinc adduct with tetrahydrofuran to grow ZnO. Substrate temperatures (T/sub sub/) have been varied from 100 deg.C to 350 deg. C, with the best device performance obtained for T/sub sub/ .apprx. 225 deg C to 250 deg C. These studies were conducted with substrates obtained from Siemens Solar (CIGSS) and NREL (CIGS). ZnO/CIS solar cells were fabricated by first depositing a ZnO buffer layer, followed by deposition of a low resistivity ZnO top contact layer and a Al/Ag collector grid. Several cells have beenfabricated with an area of 0.44 cm/sup 2/ that have total area efficiencies greater than 11%. In particular, a cell was fabricated with a Siemens substrate that exhibited a total area efficiency of 11.3%, and one based on a NREL substrate that has a total area efficiency of 12%. This work has focused on determining optimum deposition parameters for CVD ZnO buffer layers. It is clear that inorder to achieve efficient ZnO/CIS cells, the buffer layer must be deposited with a high resisitivity.",

author = "NREL",

note = "Work performed by Washington State University, Richland, Washington; Twenty Fifth IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

year = "1996",

doi = "10.1109/PVSC.1996.564299",

language = "American English",

pages = "997--1000",

}

TY - CONF

T1 - CIS Solar Cells with ZnO Buffer Layers

AU - NREL, null

N1 - Work performed by Washington State University, Richland, Washington

PY - 1996

Y1 - 1996

N2 - This work describes investigations of CIS solar cells with ZnO buffer layers. Studies are concentrating on determining optimum ZnO buffer layer properties that will yield the maximum ZnO/CIS solar cell efficiency. Buffer layers are grown by chemical vapor deposition (CVD) by reacting a zinc adduct with tetrahydrofuran to grow ZnO. Substrate temperatures (T/sub sub/) have been varied from 100 deg.C to 350 deg. C, with the best device performance obtained for T/sub sub/ .apprx. 225 deg C to 250 deg C. These studies were conducted with substrates obtained from Siemens Solar (CIGSS) and NREL (CIGS). ZnO/CIS solar cells were fabricated by first depositing a ZnO buffer layer, followed by deposition of a low resistivity ZnO top contact layer and a Al/Ag collector grid. Several cells have beenfabricated with an area of 0.44 cm/sup 2/ that have total area efficiencies greater than 11%. In particular, a cell was fabricated with a Siemens substrate that exhibited a total area efficiency of 11.3%, and one based on a NREL substrate that has a total area efficiency of 12%. This work has focused on determining optimum deposition parameters for CVD ZnO buffer layers. It is clear that inorder to achieve efficient ZnO/CIS cells, the buffer layer must be deposited with a high resisitivity.

AB - This work describes investigations of CIS solar cells with ZnO buffer layers. Studies are concentrating on determining optimum ZnO buffer layer properties that will yield the maximum ZnO/CIS solar cell efficiency. Buffer layers are grown by chemical vapor deposition (CVD) by reacting a zinc adduct with tetrahydrofuran to grow ZnO. Substrate temperatures (T/sub sub/) have been varied from 100 deg.C to 350 deg. C, with the best device performance obtained for T/sub sub/ .apprx. 225 deg C to 250 deg C. These studies were conducted with substrates obtained from Siemens Solar (CIGSS) and NREL (CIGS). ZnO/CIS solar cells were fabricated by first depositing a ZnO buffer layer, followed by deposition of a low resistivity ZnO top contact layer and a Al/Ag collector grid. Several cells have beenfabricated with an area of 0.44 cm/sup 2/ that have total area efficiencies greater than 11%. In particular, a cell was fabricated with a Siemens substrate that exhibited a total area efficiency of 11.3%, and one based on a NREL substrate that has a total area efficiency of 12%. This work has focused on determining optimum deposition parameters for CVD ZnO buffer layers. It is clear that inorder to achieve efficient ZnO/CIS cells, the buffer layer must be deposited with a high resisitivity.

U2 - 10.1109/PVSC.1996.564299

DO - 10.1109/PVSC.1996.564299

M3 - Paper

SP - 997

EP - 1000

T2 - Twenty Fifth IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

CIS Solar Cells with ZnO Buffer Layers

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

Fingerprint

Cite this