Abstract
Inorganic perovskite CsPbI3 solar cells hold great potential for improving the operational stability of perovskite photovoltaics. However, electron extraction is limited by the low conductivity of TiO2, representing a bottleneck for achieving stable performance. In this study, a co-doping strategy for TiO2 using Nb(V) and Sn(IV), which reduces the material's work function by 80 meV compared to Nb(V) mono-doped TiO2, is introduced. To gain fundamental understanding of the processes at the interfaces between the perovskite and charge-selective layer, transient surface photovoltage measurements are applied, revealing the beneficial effect of the energetic and structural modification on electron extraction across the CsPbI3/TiO2 interface. Using 2D drift-diffusion simulations, it is found that co-doping reduces the interface hole recombination velocity by two orders of magnitude, increasing the concentration of extracted electrons by 20%. When integrated into n-i-p solar cells, co-doped TiO2 enhances the projected TS80 lifetimes under continuous AM1.5G illumination by a factor of 25 compared to mono-doped TiO2. This study provides fundamental insights into interfacial charge extraction and its correlation with operational stability of perovskite solar cells, offering potential applications for other charge-selective contacts.
Original language | American English |
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Journal | Small Science |
DOIs | |
State | Published - 2025 |
NREL Publication Number
- NREL/JA-5K00-95378
Keywords
- 2D drift-diffusion model
- CsPbI3 solar cells
- solar cell stability
- surfacephotovoltage
- TiO 2 co-doping