Coalescence of GaP on V-Groove Si Substrates

Theresa E. Saenz, John S. Mangum, Olivia D. Schneble, Anica N. Neumann, Ryan M. France, William E. McMahon, Jeramy D. Zimmerman, Emily L. Warren

Research output: Contribution to journalArticlepeer-review

2 Scopus Citations

Abstract

Here, we study the morphology and dislocation dynamics of metalorganic vapor phase epitaxy (MOVPE)-grown GaP on a V-groove Si substrate. We show that Si from the substrate stabilizes the (0 0 1) GaP facet, which is critical for achieving coalescence. The SiNx caps covering the (0 0 1) tops of the V-grooves must be sufficiently small for the 3 x 1 GaP surface reconstruction caused by Si to continue to influence the GaP coalescence while the V-grooved sidewalls are covered. If the SiNx caps are too large, (1 1 1) diamond faceting develops in the GaP, and coalescence does not occur. On samples where coalescence is successful, we measure a root-mean-square roughness of 0.2 nm and a threading dislocation density of 5 x 10^7 cm^-2. Dislocation glide was found to begin during coalescence through transmission electron microscopy. With further TDD reduction, these GaP on V-groove templates will be suitable for III-V optoelectronic device growth.
Original languageAmerican English
Pages (from-to)721-728
Number of pages8
JournalACS Applied Electronic Materials
Volume5
Issue number2
DOIs
StatePublished - 2023

Bibliographical note

Publisher Copyright:
© 2023 The Authors. Published by American Chemical Society

NREL Publication Number

  • NREL/JA-5900-83465

Keywords

  • GaP
  • III-V
  • metalorganic vapor phase epitaxy
  • MOVPE
  • optoelectronic device
  • photovoltaic
  • PV
  • Si substrate
  • v-groove

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