Coalescence of GaP on V-Groove Si

Engineering

• Growth Condition 100%
• Imaging Contrast 100%
• Dislocation Dynamics 100%
• Threading Dislocation 100%
• Channelling 100%
• Atomic Force Microscopy 50%
• Multijunction Solar Cell 50%
• Growth Process 50%
• Si Wafer 50%
• Dislocation Glide 50%
• Substrate Surface 50%
• Mitigation Strategy 50%
• Directional 50%
• Mechanical Polishing 50%
• Growth Mode 50%
• Misfit Dislocation 50%
• Solar Cell 50%
• Flat Surface 50%

Material Science

• Vapor Phase Epitaxy 100%
• Solar Cell 66%
• Dislocation Dynamics 66%
• Film 33%
• Transmission Electron Microscopy 33%
• Epitaxy 33%
• Atomic Force Microscopy 33%
• Dislocation (Crystal) 33%
• Surface (Surface Science) 33%
• Morphology 33%