Coherent Acoustic Phonon Generation in GaAs1-x Bi x

R. S. Joshya; A. J. Ptak; R. France; A. Mascarenhas; R. N. Kini

doi:10.1063/1.4867702

Coherent Acoustic Phonon Generation in GaAs1-x Bi x

R. S. Joshya, A. J. Ptak, R. France, A. Mascarenhas, R. N. Kini

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

3 Scopus Citations

Abstract

We have used femtosecond laser pulses to generate coherent acoustic phonons in the dilute Bismide alloy, GaAs_1-xBi_x. The observed oscillation periods match well with the oscillation periods calculated using the propagating strain pulse model. We attribute the generation process predominantly to electronic stress due to the absorption of the laser pulse at the surface of the GaAs_1-xBi_x layer. Our initial estimates suggest that the incorporation of Bi in GaAs causes an enhancement of the hydrostatic deformation potential because of the resonant state in the valence band due to isolated Bi impurities.

Original language	American English
Article number	091903
Number of pages	4
Journal	Applied Physics Letters
Volume	104
Issue number	9
DOIs	https://doi.org/10.1063/1.4867702 https://doi.org/10.1063/1.4867702
State	Published - 3 Mar 2014

NREL Publication Number

NREL/JA-5200-61788

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abstract = "We have used femtosecond laser pulses to generate coherent acoustic phonons in the dilute Bismide alloy, GaAs1-xBix. The observed oscillation periods match well with the oscillation periods calculated using the propagating strain pulse model. We attribute the generation process predominantly to electronic stress due to the absorption of the laser pulse at the surface of the GaAs1-xBix layer. Our initial estimates suggest that the incorporation of Bi in GaAs causes an enhancement of the hydrostatic deformation potential because of the resonant state in the valence band due to isolated Bi impurities.",

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AU - Ptak, A. J.

AU - France, R.

AU - Mascarenhas, A.

AU - Kini, R. N.

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Y1 - 2014/3/3

N2 - We have used femtosecond laser pulses to generate coherent acoustic phonons in the dilute Bismide alloy, GaAs1-xBix. The observed oscillation periods match well with the oscillation periods calculated using the propagating strain pulse model. We attribute the generation process predominantly to electronic stress due to the absorption of the laser pulse at the surface of the GaAs1-xBix layer. Our initial estimates suggest that the incorporation of Bi in GaAs causes an enhancement of the hydrostatic deformation potential because of the resonant state in the valence band due to isolated Bi impurities.

AB - We have used femtosecond laser pulses to generate coherent acoustic phonons in the dilute Bismide alloy, GaAs1-xBix. The observed oscillation periods match well with the oscillation periods calculated using the propagating strain pulse model. We attribute the generation process predominantly to electronic stress due to the absorption of the laser pulse at the surface of the GaAs1-xBix layer. Our initial estimates suggest that the incorporation of Bi in GaAs causes an enhancement of the hydrostatic deformation potential because of the resonant state in the valence band due to isolated Bi impurities.

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Coherent Acoustic Phonon Generation in GaAs1-x Bi x

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