Coincident Site Lattice Matched InGaN on (111) Spinel Substrates

A. G. Norman; P. C. Dippo; H. R. Moutinho; J. Simon; A. J. Ptak

doi:10.1063/1.3702577

Coincident Site Lattice Matched InGaN on (111) Spinel Substrates

A. G. Norman, P. C. Dippo, H. R. Moutinho, J. Simon, A. J. Ptak

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

5 Scopus Citations

Abstract

Coincident site lattice-matched wurtzite (0001) In _0.31Ga _0.69N, emitting in the important green wavelength region, is demonstrated by molecular beam epitaxy on a cubic (111) MgAl ₂O ₄ spinel substrate. The coincident site lattice matching condition involves a 30° rotation between the lattice of the InGaN epitaxial layer and the lattice of the spinel. This work describes an alternative approach towards realizing more compositionally homogenous InGaN films with low dislocation density emitting in the "green gap" of low efficiency currently observed for semiconductor light emitting diodes (LEDs). This approach could lead to higher efficiency green LEDs presently of great interest for solid-state lighting applications.

Original language	American English
Article number	152106
Number of pages	3
Journal	Applied Physics Letters
Volume	100
Issue number	15
DOIs	https://doi.org/10.1063/1.3702577 https://doi.org/10.1063/1.3702577
State	Published - 9 Apr 2012

NREL Publication Number

NREL/JA-5200-54687

Keywords

crystal lattices
crystal structure
crystallographic defects
electron backscatter diffraction
energy dispersive X-ray spectroscopy
epitaxy
focused ion beam
light emitting diodes
scanning electron microscopy
transmission electron microscopy

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title = "Coincident Site Lattice Matched InGaN on (111) Spinel Substrates",

abstract = "Coincident site lattice-matched wurtzite (0001) In 0.31Ga 0.69N, emitting in the important green wavelength region, is demonstrated by molecular beam epitaxy on a cubic (111) MgAl 2O 4 spinel substrate. The coincident site lattice matching condition involves a 30° rotation between the lattice of the InGaN epitaxial layer and the lattice of the spinel. This work describes an alternative approach towards realizing more compositionally homogenous InGaN films with low dislocation density emitting in the {"}green gap{"} of low efficiency currently observed for semiconductor light emitting diodes (LEDs). This approach could lead to higher efficiency green LEDs presently of great interest for solid-state lighting applications.",

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year = "2012",

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language = "American English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Coincident Site Lattice Matched InGaN on (111) Spinel Substrates

AU - Norman, A. G.

AU - Dippo, P. C.

AU - Moutinho, H. R.

AU - Simon, J.

AU - Ptak, A. J.

PY - 2012/4/9

Y1 - 2012/4/9

N2 - Coincident site lattice-matched wurtzite (0001) In 0.31Ga 0.69N, emitting in the important green wavelength region, is demonstrated by molecular beam epitaxy on a cubic (111) MgAl 2O 4 spinel substrate. The coincident site lattice matching condition involves a 30° rotation between the lattice of the InGaN epitaxial layer and the lattice of the spinel. This work describes an alternative approach towards realizing more compositionally homogenous InGaN films with low dislocation density emitting in the "green gap" of low efficiency currently observed for semiconductor light emitting diodes (LEDs). This approach could lead to higher efficiency green LEDs presently of great interest for solid-state lighting applications.

AB - Coincident site lattice-matched wurtzite (0001) In 0.31Ga 0.69N, emitting in the important green wavelength region, is demonstrated by molecular beam epitaxy on a cubic (111) MgAl 2O 4 spinel substrate. The coincident site lattice matching condition involves a 30° rotation between the lattice of the InGaN epitaxial layer and the lattice of the spinel. This work describes an alternative approach towards realizing more compositionally homogenous InGaN films with low dislocation density emitting in the "green gap" of low efficiency currently observed for semiconductor light emitting diodes (LEDs). This approach could lead to higher efficiency green LEDs presently of great interest for solid-state lighting applications.

KW - crystal lattices

KW - crystal structure

KW - crystallographic defects

KW - electron backscatter diffraction

KW - energy dispersive X-ray spectroscopy

KW - epitaxy

KW - focused ion beam

KW - light emitting diodes

KW - scanning electron microscopy

KW - transmission electron microscopy

UR - http://www.scopus.com/inward/record.url?scp=84859786748&partnerID=8YFLogxK

U2 - 10.1063/1.3702577

DO - 10.1063/1.3702577

M3 - Article

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SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 152106

ER -

Coincident Site Lattice Matched InGaN on (111) Spinel Substrates

Abstract

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Keywords

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