Abstract
Collection of photocarriers in GaxIn1-xNyAs1-y solar cells is limited by the poor quality of the GaxIn1-xNyAs1-y. Some reports have shown collection of photocarriers outside of the depleted layer in annealed GaxIn1-xNyAs1-y, but the key to achieving the higher collection has been unclear. In this paper, we attempt to quantify the diffusion and collection lengths that contribute to thephotocurrent in GaxIn1-xNyAs1-y solar cells. The data imply that the effective ..mu..tau.. product for the lightly doped GaxIn1-xNyAs1-y material may vary when a field is applied. We conclude that the fields present in most of our best GaxIn1-xNyAs1-y cells are large enough to aid collection of photocarriers.
| Original language | American English |
|---|---|
| Number of pages | 7 |
| State | Published - 2005 |
| Event | 31st IEEE Photovoltaics Specialists Conference and Exhibition - Lake Buena Vista, Florida Duration: 3 Jan 2005 → 7 Jan 2005 |
Conference
| Conference | 31st IEEE Photovoltaics Specialists Conference and Exhibition |
|---|---|
| City | Lake Buena Vista, Florida |
| Period | 3/01/05 → 7/01/05 |
NLR Publication Number
- NREL/CP-520-37157
Keywords
- capacitance voltage (CV)
- electron mobilities
- field-aided collection
- photocarriers
- photocurrent
- PV
- solar cells