Abstract
Precise band alignment at the front interface of CdTe-based solar cells is necessary to reduce photoexcited charge carrier recombination and to enable higher energy conversion efficiencies. Magnesium zinc oxide is not only transparent but also offers the ability to tune the conduction band offset with CdTe at the front of the device stack. In this work, we describe reactive sputtering of Mg1-xZnxO using metal targets and its application in CdTe photovoltaics. Combinatorial libraries of Mg1-xZnxO were created to tune the conduction band alignment for the optimal performance of CdTe solar cells. Band gap variation of more than 0.4 eV is achieved across a 3-inch substrate. Kelvin probe measurements demonstrate variance of work function across the substrate. Device performance is optimized at band gaps of 3.5 eV for the CdTe device processing conditions employed in this study.
Original language | American English |
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Pages | 2498-2502 |
Number of pages | 5 |
DOIs | |
State | Published - Jun 2019 |
Event | 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019 |
Conference
Conference | 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 |
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Country/Territory | United States |
City | Chicago |
Period | 16/06/19 → 21/06/19 |
Bibliographical note
Publisher Copyright:© 2019 IEEE.
NREL Publication Number
- NREL/CP-5K00-76336
Keywords
- band alignment
- buffer layer
- cadmium telluride
- Kelvin probe
- magnesium zinc oxide