Abstract
We report on studies related to the synthesis of thin-film Cu 2ZnSnS4 via sulfurization of metal-precursor thin films. Combinatorially graded thin-film Cu-Zn-Sn library samples spanning various regions of the ternary Cu-Zn-Sn phase diagram were deposited at temperatures below 375 K and subsequently sulfurized in a high-vacuum system equipped with a sulfur valved-cracking source at temperatures from 600 K to 675 K. Comparisons of x-ray fluorescence and x-ray diffraction data from pre- and post-sulfurization films have revealed correlations between processing conditions, film composition, and the crystalline phases present. We have also performed cathodoluminescence and photoluminescence measurements and identified emission features consistent with the formation of the Cu2ZnSnS 4.
Original language | American English |
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Pages | 650-655 |
Number of pages | 6 |
DOIs | |
State | Published - 2010 |
Event | 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: 20 Jun 2010 → 25 Jun 2010 |
Conference
Conference | 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 |
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Country/Territory | United States |
City | Honolulu, HI |
Period | 20/06/10 → 25/06/10 |
NREL Publication Number
- NREL/CP-520-47734
Keywords
- precursors
- thin-film solar cells