Comment on 'Electron Drift Mobility in Doped Amorphous Silicon'

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)10426-10428
    Number of pages3
    JournalPhysical Review B
    Issue number14
    StatePublished - 1989

    Bibliographical note

    Work performed by Department of Physics, University of Paderborn, Paderborn, Federal Republic of Germany, and Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina

    NREL Publication Number

    • ACNR/JA-11064

    Cite this