Comment on 'Experimental Evidence for N-Induced Strong Coupling of Host Conduction Band States in GaNxP1-x: Insight into the Dominant Mechanism for Giant Band-Gap Bowing'

A recently observed pinned peak in photoluminescence excitation spectroscopy studies (PLE) of GaNxP1-x epilayers, that remained stationary with nitrogen concentration, was attributed to a transition from the valence band edge to either the t2(X3) or t2(L) conduction bands by Buyanova [Phys. Rev. B 69, 201303(R) (2004)]. Using absorption and PLE studies on carefully prepared samples, we show that this pinned peak is merely an artifact that arises from the GaP buffer layer and is not associated with the GaNxP1-x epilayers.