Comparative Study of Minority Electron Properties in p+-GaAs Doped with Beryllium and Carbon

M. L. Lovejoy; M. R. Melloch; M. S. Lundstrom; B. M. Keyes; R. K. Ahrenkiel; T. J. De Lyon; J. M. Woodall

doi:10.1063/1.107756

Comparative Study of Minority Electron Properties in p+-GaAs Doped with Beryllium and Carbon

M. L. Lovejoy, M. R. Melloch, M. S. Lundstrom, B. M. Keyes, R. K. Ahrenkiel, T. J. De Lyon, J. M. Woodall

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Abstract

Minority electron properties in p⁺-GaAs doped with beryllium (Be) and with carbon (C) are reported. Measurements of essentially identical responses for structures differing only in dopant element demonstrate that the diffusivity (D_n) and the diffusion lengths (L_n) are the same in p⁺-GaAs doped to ∼10¹⁹ cm^-3 with Be- and C-dopants. Zero-field time-of-flight analysis yields D_n=35 cm²/s and internal quantum efficiency analysis yields L _n=2.4 μm, which implies a lifetime that is approximately at the estimated radiative limit. In addition, the majority Hall mobility was also found to be identical for the Be- and C-doped material.

Original language	American English
Pages (from-to)	822-824
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	7
DOIs	https://doi.org/10.1063/1.107756 https://doi.org/10.1063/1.107756
State	Published - 1992

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ACNR/JA-14242

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@article{143f25a12a724f6d88318d877941d131,

title = "Comparative Study of Minority Electron Properties in p+-GaAs Doped with Beryllium and Carbon",

abstract = "Minority electron properties in p+-GaAs doped with beryllium (Be) and with carbon (C) are reported. Measurements of essentially identical responses for structures differing only in dopant element demonstrate that the diffusivity (Dn) and the diffusion lengths (Ln) are the same in p+-GaAs doped to ∼1019 cm-3 with Be- and C-dopants. Zero-field time-of-flight analysis yields Dn=35 cm2/s and internal quantum efficiency analysis yields L n=2.4 μm, which implies a lifetime that is approximately at the estimated radiative limit. In addition, the majority Hall mobility was also found to be identical for the Be- and C-doped material.",

author = "Lovejoy, {M. L.} and Melloch, {M. R.} and Lundstrom, {M. S.} and Keyes, {B. M.} and Ahrenkiel, {R. K.} and {De Lyon}, {T. J.} and Woodall, {J. M.}",

year = "1992",

doi = "10.1063/1.107756",

language = "American English",

volume = "61",

pages = "822--824",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Comparative Study of Minority Electron Properties in p+-GaAs Doped with Beryllium and Carbon

AU - Lovejoy, M. L.

AU - Melloch, M. R.

AU - Lundstrom, M. S.

AU - Keyes, B. M.

AU - Ahrenkiel, R. K.

AU - De Lyon, T. J.

AU - Woodall, J. M.

PY - 1992

Y1 - 1992

N2 - Minority electron properties in p+-GaAs doped with beryllium (Be) and with carbon (C) are reported. Measurements of essentially identical responses for structures differing only in dopant element demonstrate that the diffusivity (Dn) and the diffusion lengths (Ln) are the same in p+-GaAs doped to ∼1019 cm-3 with Be- and C-dopants. Zero-field time-of-flight analysis yields Dn=35 cm2/s and internal quantum efficiency analysis yields L n=2.4 μm, which implies a lifetime that is approximately at the estimated radiative limit. In addition, the majority Hall mobility was also found to be identical for the Be- and C-doped material.

AB - Minority electron properties in p+-GaAs doped with beryllium (Be) and with carbon (C) are reported. Measurements of essentially identical responses for structures differing only in dopant element demonstrate that the diffusivity (Dn) and the diffusion lengths (Ln) are the same in p+-GaAs doped to ∼1019 cm-3 with Be- and C-dopants. Zero-field time-of-flight analysis yields Dn=35 cm2/s and internal quantum efficiency analysis yields L n=2.4 μm, which implies a lifetime that is approximately at the estimated radiative limit. In addition, the majority Hall mobility was also found to be identical for the Be- and C-doped material.

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U2 - 10.1063/1.107756

DO - 10.1063/1.107756

M3 - Article

AN - SCOPUS:0942270313

SN - 0003-6951

VL - 61

SP - 822

EP - 824

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Comparative Study of Minority Electron Properties in p+-GaAs Doped with Beryllium and Carbon

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