Abstract
Zn(O,S) thin films were deposited by chemical bath deposition (CBD), atomic layer deposition, and sputtering. Composition of the films and band gap were measured and found to follow the trends described in the literature. CBD Zn(O,S) parameters were optimized and resulted in an 18.5% efficiency cell that did not require post annealing, light soaking, or an undoped ZnO layer. Promising resultswere obtained with sputtering. A 13% efficiency cell was obtained for a Zn(O,S) emitter layer deposited with 0.5%O2. With further optimization of process parameters and an analysis of the loss mechanisms, it should be possible to increase the efficiency.
| Original language | American English |
|---|---|
| Number of pages | 6 |
| State | Published - 2012 |
| Event | 2012 IEEE Photovoltaic Specialists Conference - Austin, Texas Duration: 3 Jun 2012 → 8 Jun 2012 |
Conference
| Conference | 2012 IEEE Photovoltaic Specialists Conference |
|---|---|
| City | Austin, Texas |
| Period | 3/06/12 → 8/06/12 |
NREL Publication Number
- NREL/CP-5200-54138
Keywords
- buffer layers
- copper indium gallium diselenide (CIGS)
- emitters
- solar cells
- thin film
- wide bad gap
- zinc oxysulfide