Comparison and Interpretation of Admittance Spectroscopy and Deep Level Transient Spectroscopy from Co-Evaporated and Solution-Deposited Cu2ZnSn(Sx, Se1-x)4 Solar Cells

Carolyn Beall; Ingrid Repins; A.E. Caruso; E.A. Lund; V. Kosyak; D.S. Pruzan; C. Miskin; R. Agrawal; M.A. Scarpulla

doi:10.1109/PVSC.2016.7750218

Comparison and Interpretation of Admittance Spectroscopy and Deep Level Transient Spectroscopy from Co-Evaporated and Solution-Deposited Cu2ZnSn(Sx, Se1-x)4 Solar Cells

Carolyn Beall, Ingrid Repins, A.E. Caruso, E.A. Lund, V. Kosyak, D.S. Pruzan, C. Miskin, R. Agrawal, M.A. Scarpulla

Materials Science

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

Cu₂ZnSn(S, Se)₄ (CZTSe) is an earth-abundant semiconductor with potential for economical thin-film photovoltaic devices. Short minority carrier lifetimes contribute to low open circuit voltage and efficiency. Deep level defects that may contribute to lower minority carrier lifetimes in kesterites have been theoretically predicted, however very little experimental characterization of these deep defects exists. In this work we use admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) to characterize devices built using CZTSSe absorber layers deposited via both coevaporation and solution processing. AS reveals a band of widely-distributed activation energies for traps or energy barriers for transport, especially in the solution deposited case. DLTS reveals signatures of deep majority and minority traps within both types of samples.

Original language	American English
Pages	3018-3022
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2016.7750218 https://doi.org/10.1109/PVSC.2016.7750218
State	Published - 18 Nov 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	5/06/16 → 10/06/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

NREL Publication Number

NREL/CP-5K00-67924

Keywords

admittance
capacitance
capacitance measurement
energy barrier
spectroscopy
temperature measurement
transient analysis

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Beall, C., Repins, I., Caruso, A. E., Lund, E. A., Kosyak, V., Pruzan, D. S., Miskin, C., Agrawal, R., & Scarpulla, M. A. (2016). Comparison and Interpretation of Admittance Spectroscopy and Deep Level Transient Spectroscopy from Co-Evaporated and Solution-Deposited Cu2ZnSn(Sx, Se1-x)4 Solar Cells. 3018-3022. Paper presented at 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States. https://doi.org/10.1109/PVSC.2016.7750218, https://doi.org/10.1109/PVSC.2016.7750218

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title = "Comparison and Interpretation of Admittance Spectroscopy and Deep Level Transient Spectroscopy from Co-Evaporated and Solution-Deposited Cu2ZnSn(Sx, Se1-x)4 Solar Cells",

abstract = "Cu2ZnSn(S, Se)4 (CZTSe) is an earth-abundant semiconductor with potential for economical thin-film photovoltaic devices. Short minority carrier lifetimes contribute to low open circuit voltage and efficiency. Deep level defects that may contribute to lower minority carrier lifetimes in kesterites have been theoretically predicted, however very little experimental characterization of these deep defects exists. In this work we use admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) to characterize devices built using CZTSSe absorber layers deposited via both coevaporation and solution processing. AS reveals a band of widely-distributed activation energies for traps or energy barriers for transport, especially in the solution deposited case. DLTS reveals signatures of deep majority and minority traps within both types of samples.",

keywords = "admittance, capacitance, capacitance measurement, energy barrier, spectroscopy, temperature measurement, transient analysis",

author = "Carolyn Beall and Ingrid Repins and A.E. Caruso and E.A. Lund and V. Kosyak and D.S. Pruzan and C. Miskin and R. Agrawal and M.A. Scarpulla",

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doi = "10.1109/PVSC.2016.7750218",

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Beall, C, Repins, I, Caruso, AE, Lund, EA, Kosyak, V, Pruzan, DS, Miskin, C, Agrawal, R & Scarpulla, MA 2016, 'Comparison and Interpretation of Admittance Spectroscopy and Deep Level Transient Spectroscopy from Co-Evaporated and Solution-Deposited Cu2ZnSn(Sx, Se1-x)4 Solar Cells', Paper presented at 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5/06/16 - 10/06/16 pp. 3018-3022. https://doi.org/10.1109/PVSC.2016.7750218, https://doi.org/10.1109/PVSC.2016.7750218

Comparison and Interpretation of Admittance Spectroscopy and Deep Level Transient Spectroscopy from Co-Evaporated and Solution-Deposited Cu2ZnSn(Sx, Se1-x)4 Solar Cells. / Beall, Carolyn; Repins, Ingrid; Caruso, A.E. et al.
2016. 3018-3022 Paper presented at 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

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AU - Beall, Carolyn

AU - Repins, Ingrid

AU - Caruso, A.E.

AU - Lund, E.A.

AU - Kosyak, V.

AU - Pruzan, D.S.

AU - Miskin, C.

AU - Agrawal, R.

AU - Scarpulla, M.A.

PY - 2016/11/18

Y1 - 2016/11/18

N2 - Cu2ZnSn(S, Se)4 (CZTSe) is an earth-abundant semiconductor with potential for economical thin-film photovoltaic devices. Short minority carrier lifetimes contribute to low open circuit voltage and efficiency. Deep level defects that may contribute to lower minority carrier lifetimes in kesterites have been theoretically predicted, however very little experimental characterization of these deep defects exists. In this work we use admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) to characterize devices built using CZTSSe absorber layers deposited via both coevaporation and solution processing. AS reveals a band of widely-distributed activation energies for traps or energy barriers for transport, especially in the solution deposited case. DLTS reveals signatures of deep majority and minority traps within both types of samples.

AB - Cu2ZnSn(S, Se)4 (CZTSe) is an earth-abundant semiconductor with potential for economical thin-film photovoltaic devices. Short minority carrier lifetimes contribute to low open circuit voltage and efficiency. Deep level defects that may contribute to lower minority carrier lifetimes in kesterites have been theoretically predicted, however very little experimental characterization of these deep defects exists. In this work we use admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) to characterize devices built using CZTSSe absorber layers deposited via both coevaporation and solution processing. AS reveals a band of widely-distributed activation energies for traps or energy barriers for transport, especially in the solution deposited case. DLTS reveals signatures of deep majority and minority traps within both types of samples.

KW - admittance

KW - capacitance

KW - capacitance measurement

KW - energy barrier

KW - spectroscopy

KW - temperature measurement

KW - transient analysis

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ER -

Beall C, Repins I, Caruso AE, Lund EA, Kosyak V, Pruzan DS et al.. Comparison and Interpretation of Admittance Spectroscopy and Deep Level Transient Spectroscopy from Co-Evaporated and Solution-Deposited Cu2ZnSn(Sx, Se1-x)4 Solar Cells. 2016. Paper presented at 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States. doi: 10.1109/PVSC.2016.7750218, 10.1109/PVSC.2016.7750218

Comparison and Interpretation of Admittance Spectroscopy and Deep Level Transient Spectroscopy from Co-Evaporated and Solution-Deposited Cu2ZnSn(Sx, Se1-x)4 Solar Cells

Abstract

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NREL Publication Number

Keywords

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