Comparison between Forward Bias Currents in P/I/N and P/C(B/P)/N Hydrogenated Amorphous Silicon Diodes

    Research output: Contribution to conferencePaper

    Original languageAmerican English
    Number of pages6
    StatePublished - 1988
    EventMRS Spring Meeting - Reno, Nevada
    Duration: 5 Apr 19888 Apr 1988


    ConferenceMRS Spring Meeting
    CityReno, Nevada

    Bibliographical note

    Work performed by Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina

    NREL Publication Number

    • ACNR/CP-10498

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