Comparison between Forward Bias Currents in P/I/N and P/C(B/P)/N Hydrogenated Amorphous Silicon Diodes

Comparison between Forward Bias Currents in P/I/N and P/C(B/P)/N Hydrogenated Amorphous Silicon Diodes

Research output: Contribution to conference › Paper

Original language	American English
Pages	501-506
Number of pages	6
State	Published - 1988
Event	MRS Spring Meeting - Reno, Nevada Duration: 5 Apr 1988 → 8 Apr 1988

Conference

Conference	MRS Spring Meeting
City	Reno, Nevada
Period	5/04/88 → 8/04/88

Bibliographical note

Work performed by Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina

NREL Publication Number

ACNR/CP-10498

Cite this

@conference{998d45810c424f249e273162e482cebb,

title = "Comparison between Forward Bias Currents in P/I/N and P/C(B/P)/N Hydrogenated Amorphous Silicon Diodes",

author = "NREL",

note = "Work performed by Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina; MRS Spring Meeting ; Conference date: 05-04-1988 Through 08-04-1988",

year = "1988",

language = "American English",

pages = "501--506",

}

TY - CONF

T1 - Comparison between Forward Bias Currents in P/I/N and P/C(B/P)/N Hydrogenated Amorphous Silicon Diodes

AU - NREL, null

N1 - Work performed by Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina

PY - 1988

Y1 - 1988

M3 - Paper

SP - 501

EP - 506

T2 - MRS Spring Meeting

Y2 - 5 April 1988 through 8 April 1988

ER -