Comparison of Amorphous InZnO and Polycrystalline ZnO:Al Conductive Layers for CIGS Solar Cells

R. Sundaramoorthy, I. L. Repins, T. Gennett, F. J. Pern, D. Albin, Jian V. Li, C. DeHart, S. Glynn, J. D. Perkins, D. S. Ginley, T. Gessert

Research output: Contribution to conferencePaperpeer-review

11 Scopus Citations

Abstract

We investigated the optical and electrical properties of amorphous InZnO (IZO) as a potential replacement of AI-doped ZnO (AZO) conducting window layer for CuinGaSe2 (CIGS) solar cells. The device performance of CIGS devices with IZO of different thickness and sheet resistance was compared with that of CIGS standard devices with AZO. The results show that the optical and electrical properties of IZO were affected by deposition conditions, especially by the oxygen concentration, and thickness. Initial results on the CIGS solar cells showed that devices with IZO yield cell efficiencies comparable to that of the devices with standard AZO, when the sheet resistance of IZO was close to that of AZO.

Original languageAmerican English
Pages1576-1581
Number of pages6
DOIs
StatePublished - 2009
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: 7 Jun 200912 Jun 2009

Conference

Conference2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/TerritoryUnited States
CityPhiladelphia, PA
Period7/06/0912/06/09

NREL Publication Number

  • NREL/CP-520-46054

Keywords

  • materials science
  • photovoltaics
  • solar energy

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