Comparison of CdS/CdTe Superstrate and Substrate Devices Fabricated with a ZnTe:Cu Contact Interface

T. A. Gessert, R. G. Dhere, J. N. Duenow, J. V. Li, S. E. Asher, M. R. Young

Research output: Contribution to conferencePaperpeer-review

3 Scopus Citations

Abstract

Superstrate and substrate CdS/CdTe devices have been fabricated with a ZnTe:Cu contact. The main variable probed is the effect of Cu diffusion from the ZnTe:Cu contact interface layer. A combination of electrical and composition analysis indicates that, for the substrate devices produced for this study, the amount of Cu in the CdTe layer is too high for optimum device operation. Admittance spectroscopy analysis suggests that superstrate devices with excessive Cu have similar defect functionality as the substrate devices with a ZnTe:Cu contact interface. Temperature-dependant, current-voltage analysis further suggests that it may be possible to ascribe subtle differences in I-;V rollover to either a back-contact barrier or an artifact of Cu in the CdS.

Original languageAmerican English
Pages335-339
Number of pages5
DOIs
StatePublished - 2010
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: 20 Jun 201025 Jun 2010

Conference

Conference35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/TerritoryUnited States
CityHonolulu, HI
Period20/06/1025/06/10

NREL Publication Number

  • NREL/CP-520-47699

Keywords

  • devices
  • materials
  • photovoltaics

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