Comparison of CdS/CdTe Superstrate and Substrate Devices Fabricated with a ZnTe:Cu Contact Interface

T. A. Gessert; R. G. Dhere; J. N. Duenow; J. V. Li; S. E. Asher; M. R. Young

doi:10.1109/PVSC.2010.5616922

Comparison of CdS/CdTe Superstrate and Substrate Devices Fabricated with a ZnTe:Cu Contact Interface

T. A. Gessert, R. G. Dhere, J. N. Duenow, J. V. Li, S. E. Asher, M. R. Young

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

4 Scopus Citations

Abstract

Superstrate and substrate CdS/CdTe devices have been fabricated with a ZnTe:Cu contact. The main variable probed is the effect of Cu diffusion from the ZnTe:Cu contact interface layer. A combination of electrical and composition analysis indicates that, for the substrate devices produced for this study, the amount of Cu in the CdTe layer is too high for optimum device operation. Admittance spectroscopy analysis suggests that superstrate devices with excessive Cu have similar defect functionality as the substrate devices with a ZnTe:Cu contact interface. Temperature-dependant, current-voltage analysis further suggests that it may be possible to ascribe subtle differences in I-;V rollover to either a back-contact barrier or an artifact of Cu in the CdS.

Original language	American English
Pages	335-339
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2010.5616922 https://doi.org/10.1109/PVSC.2010.5616922
State	Published - 2010
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: 20 Jun 2010 → 25 Jun 2010

Conference

Conference	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/Territory	United States
City	Honolulu, HI
Period	20/06/10 → 25/06/10

NREL Publication Number

NREL/CP-520-47699

Keywords

devices
materials
photovoltaics

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Gessert, T. A., Dhere, R. G., Duenow, J. N., Li, J. V., Asher, S. E., & Young, M. R. (2010). Comparison of CdS/CdTe Superstrate and Substrate Devices Fabricated with a ZnTe:Cu Contact Interface. 335-339. Paper presented at 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States. https://doi.org/10.1109/PVSC.2010.5616922, https://doi.org/10.1109/PVSC.2010.5616922

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title = "Comparison of CdS/CdTe Superstrate and Substrate Devices Fabricated with a ZnTe:Cu Contact Interface",

abstract = "Superstrate and substrate CdS/CdTe devices have been fabricated with a ZnTe:Cu contact. The main variable probed is the effect of Cu diffusion from the ZnTe:Cu contact interface layer. A combination of electrical and composition analysis indicates that, for the substrate devices produced for this study, the amount of Cu in the CdTe layer is too high for optimum device operation. Admittance spectroscopy analysis suggests that superstrate devices with excessive Cu have similar defect functionality as the substrate devices with a ZnTe:Cu contact interface. Temperature-dependant, current-voltage analysis further suggests that it may be possible to ascribe subtle differences in I-;V rollover to either a back-contact barrier or an artifact of Cu in the CdS.",

keywords = "devices, materials, photovoltaics",

author = "Gessert, {T. A.} and Dhere, {R. G.} and Duenow, {J. N.} and Li, {J. V.} and Asher, {S. E.} and Young, {M. R.}",

year = "2010",

doi = "10.1109/PVSC.2010.5616922",

language = "American English",

pages = "335--339",

note = "35th IEEE Photovoltaic Specialists Conference, PVSC 2010 ; Conference date: 20-06-2010 Through 25-06-2010",

}

Gessert, TA, Dhere, RG, Duenow, JN, Li, JV, Asher, SE & Young, MR 2010, 'Comparison of CdS/CdTe Superstrate and Substrate Devices Fabricated with a ZnTe:Cu Contact Interface', Paper presented at 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 20/06/10 - 25/06/10 pp. 335-339. https://doi.org/10.1109/PVSC.2010.5616922, https://doi.org/10.1109/PVSC.2010.5616922

TY - CONF

T1 - Comparison of CdS/CdTe Superstrate and Substrate Devices Fabricated with a ZnTe:Cu Contact Interface

AU - Gessert, T. A.

AU - Dhere, R. G.

AU - Duenow, J. N.

AU - Li, J. V.

AU - Asher, S. E.

AU - Young, M. R.

PY - 2010

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N2 - Superstrate and substrate CdS/CdTe devices have been fabricated with a ZnTe:Cu contact. The main variable probed is the effect of Cu diffusion from the ZnTe:Cu contact interface layer. A combination of electrical and composition analysis indicates that, for the substrate devices produced for this study, the amount of Cu in the CdTe layer is too high for optimum device operation. Admittance spectroscopy analysis suggests that superstrate devices with excessive Cu have similar defect functionality as the substrate devices with a ZnTe:Cu contact interface. Temperature-dependant, current-voltage analysis further suggests that it may be possible to ascribe subtle differences in I-;V rollover to either a back-contact barrier or an artifact of Cu in the CdS.

AB - Superstrate and substrate CdS/CdTe devices have been fabricated with a ZnTe:Cu contact. The main variable probed is the effect of Cu diffusion from the ZnTe:Cu contact interface layer. A combination of electrical and composition analysis indicates that, for the substrate devices produced for this study, the amount of Cu in the CdTe layer is too high for optimum device operation. Admittance spectroscopy analysis suggests that superstrate devices with excessive Cu have similar defect functionality as the substrate devices with a ZnTe:Cu contact interface. Temperature-dependant, current-voltage analysis further suggests that it may be possible to ascribe subtle differences in I-;V rollover to either a back-contact barrier or an artifact of Cu in the CdS.

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T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010

Y2 - 20 June 2010 through 25 June 2010

ER -

Comparison of CdS/CdTe Superstrate and Substrate Devices Fabricated with a ZnTe:Cu Contact Interface

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Keywords

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