Comparison of Gettering in Single- and Multicrystalline Silicon for Solar Cells

doi:10.1109/PVSC.1996.564206

Comparison of Gettering in Single- and Multicrystalline Silicon for Solar Cells

Research output: Contribution to conference › Paper

Abstract

The differences in the impurity gettering between single and multicrystalline silicon are discussed. These differences arise from impurity-defect interactions that occur during thermal processing of multicrystalline material. A gettering model is proposed to explain the observed behavior of gettering in multicrystalline cells.

Original language	American English
Pages	625-628
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1996.564206
State	Published - 1996
Event	Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996

Conference

Conference	Twenty Fifth IEEE Photovoltaic Specialists Conference
City	Washington, D.C.
Period	13/05/96 → 17/05/96

NREL Publication Number

NREL/CP-22390

Access to Document

10.1109/PVSC.1996.564206

Cite this

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title = "Comparison of Gettering in Single- and Multicrystalline Silicon for Solar Cells",

abstract = "The differences in the impurity gettering between single and multicrystalline silicon are discussed. These differences arise from impurity-defect interactions that occur during thermal processing of multicrystalline material. A gettering model is proposed to explain the observed behavior of gettering in multicrystalline cells.",

author = "NREL",

year = "1996",

doi = "10.1109/PVSC.1996.564206",

language = "American English",

pages = "625--628",

note = "Twenty Fifth IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

}

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AU - NREL, null

PY - 1996

Y1 - 1996

N2 - The differences in the impurity gettering between single and multicrystalline silicon are discussed. These differences arise from impurity-defect interactions that occur during thermal processing of multicrystalline material. A gettering model is proposed to explain the observed behavior of gettering in multicrystalline cells.

AB - The differences in the impurity gettering between single and multicrystalline silicon are discussed. These differences arise from impurity-defect interactions that occur during thermal processing of multicrystalline material. A gettering model is proposed to explain the observed behavior of gettering in multicrystalline cells.

U2 - 10.1109/PVSC.1996.564206

DO - 10.1109/PVSC.1996.564206

M3 - Paper

SP - 625

EP - 628

T2 - Twenty Fifth IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

Comparison of Gettering in Single- and Multicrystalline Silicon for Solar Cells

Abstract

Conference

NREL Publication Number

Access to Document

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Cite this