Comparison of Hot-Carrier Relaxation in Quantum Wells and Bulk GaAs at High Carrier Densities

W. S. Pelouch; R. J. Ellingson; P. E. Powers; C. L. Tang; D. M. Szmyd; A. J. Nozik

doi:10.1103/PhysRevB.45.1450

Comparison of Hot-Carrier Relaxation in Quantum Wells and Bulk GaAs at High Carrier Densities

W. S. Pelouch, R. J. Ellingson, P. E. Powers, C. L. Tang, D. M. Szmyd, A. J. Nozik

Chemistry and Nanoscience

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Abstract

An investigation of the hot-carrier relaxation in GaAs/(Al,Ga)As quantum wells and bulk GaAs in the high-carrier-density limit is presented. Using a time-resolved luminescence up-conversion technique with 80-fs temporal resolution, carrier temperatures are measured in the 100-fs-to-2-ns range. Our results show that the hot-carrier cooling rates in the quantum wells are significantly slower than in the bulk for carrier densities greater than 2×1018 cm-3. A comparison is made with previous publications to resolve the confusion concerning the difference in cooling rates in quasi-two- and three-dimensional systems.

Original language	American English
Pages (from-to)	1450-1453
Number of pages	4
Journal	Physical Review B
Volume	45
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.45.1450 https://doi.org/10.1103/PhysRevB.45.1450
State	Published - 1992

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ACNR/JA-14231

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title = "Comparison of Hot-Carrier Relaxation in Quantum Wells and Bulk GaAs at High Carrier Densities",

abstract = "An investigation of the hot-carrier relaxation in GaAs/(Al,Ga)As quantum wells and bulk GaAs in the high-carrier-density limit is presented. Using a time-resolved luminescence up-conversion technique with 80-fs temporal resolution, carrier temperatures are measured in the 100-fs-to-2-ns range. Our results show that the hot-carrier cooling rates in the quantum wells are significantly slower than in the bulk for carrier densities greater than 2×1018 cm-3. A comparison is made with previous publications to resolve the confusion concerning the difference in cooling rates in quasi-two- and three-dimensional systems.",

author = "Pelouch, {W. S.} and Ellingson, {R. J.} and Powers, {P. E.} and Tang, {C. L.} and Szmyd, {D. M.} and Nozik, {A. J.}",

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AU - Pelouch, W. S.

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AU - Tang, C. L.

AU - Szmyd, D. M.

AU - Nozik, A. J.

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AB - An investigation of the hot-carrier relaxation in GaAs/(Al,Ga)As quantum wells and bulk GaAs in the high-carrier-density limit is presented. Using a time-resolved luminescence up-conversion technique with 80-fs temporal resolution, carrier temperatures are measured in the 100-fs-to-2-ns range. Our results show that the hot-carrier cooling rates in the quantum wells are significantly slower than in the bulk for carrier densities greater than 2×1018 cm-3. A comparison is made with previous publications to resolve the confusion concerning the difference in cooling rates in quasi-two- and three-dimensional systems.

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Comparison of Hot-Carrier Relaxation in Quantum Wells and Bulk GaAs at High Carrier Densities

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