Comparison of Hot-Carrier Relaxation in Quantum Wells and Bulk GaAs at High Carrier Densities

W. S. Pelouch, R. J. Ellingson, P. E. Powers, C. L. Tang, D. M. Szmyd, A. J. Nozik

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Abstract

An investigation of the hot-carrier relaxation in GaAs/(Al,Ga)As quantum wells and bulk GaAs in the high-carrier-density limit is presented. Using a time-resolved luminescence up-conversion technique with 80-fs temporal resolution, carrier temperatures are measured in the 100-fs-to-2-ns range. Our results show that the hot-carrier cooling rates in the quantum wells are significantly slower than in the bulk for carrier densities greater than 2×1018 cm-3. A comparison is made with previous publications to resolve the confusion concerning the difference in cooling rates in quasi-two- and three-dimensional systems.

Original languageAmerican English
Pages (from-to)1450-1453
Number of pages4
JournalPhysical Review B
Volume45
Issue number3
DOIs
StatePublished - 1992

NREL Publication Number

  • ACNR/JA-14231

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