Comparison of Hot-Carrier Relaxation in Quantum Wells and Bulk GaAs at High Carrier Densities

W. S. Pelouch; R. J. Ellingson; P. E. Powers; C. L. Tang; D. M. Szmyd; A. J. Nozik

doi:10.1103/PhysRevB.45.1450

Comparison of Hot-Carrier Relaxation in Quantum Wells and Bulk GaAs at High Carrier Densities

W. S. Pelouch
, R. J. Ellingson
, P. E. Powers
, C. L. Tang
, D. M. Szmyd
, A. J. Nozik

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

98 Scopus Citations

Abstract

An investigation of the hot-carrier relaxation in GaAs/(Al,Ga)As quantum wells and bulk GaAs in the high-carrier-density limit is presented. Using a time-resolved luminescence up-conversion technique with 80-fs temporal resolution, carrier temperatures are measured in the 100-fs-to-2-ns range. Our results show that the hot-carrier cooling rates in the quantum wells are significantly slower than in the bulk for carrier densities greater than 2×1018 cm-3. A comparison is made with previous publications to resolve the confusion concerning the difference in cooling rates in quasi-two- and three-dimensional systems.

Original language	American English
Pages (from-to)	1450-1453
Number of pages	4
Journal	Physical Review B
Volume	45
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.45.1450 https://doi.org/10.1103/PhysRevB.45.1450
State	Published - 1992

NLR Publication Number

ACNR/JA-14231

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@article{6a2f5174dd8248f6bf0f5bfe434ce80c,

title = "Comparison of Hot-Carrier Relaxation in Quantum Wells and Bulk GaAs at High Carrier Densities",

abstract = "An investigation of the hot-carrier relaxation in GaAs/(Al,Ga)As quantum wells and bulk GaAs in the high-carrier-density limit is presented. Using a time-resolved luminescence up-conversion technique with 80-fs temporal resolution, carrier temperatures are measured in the 100-fs-to-2-ns range. Our results show that the hot-carrier cooling rates in the quantum wells are significantly slower than in the bulk for carrier densities greater than 2×1018 cm-3. A comparison is made with previous publications to resolve the confusion concerning the difference in cooling rates in quasi-two- and three-dimensional systems.",

author = "Pelouch, \{W. S.\} and Ellingson, \{R. J.\} and Powers, \{P. E.\} and Tang, \{C. L.\} and Szmyd, \{D. M.\} and Nozik, \{A. J.\}",

year = "1992",

doi = "10.1103/PhysRevB.45.1450",

language = "American English",

volume = "45",

pages = "1450--1453",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Comparison of Hot-Carrier Relaxation in Quantum Wells and Bulk GaAs at High Carrier Densities

AU - Pelouch, W. S.

AU - Ellingson, R. J.

AU - Powers, P. E.

AU - Tang, C. L.

AU - Szmyd, D. M.

AU - Nozik, A. J.

PY - 1992

Y1 - 1992

N2 - An investigation of the hot-carrier relaxation in GaAs/(Al,Ga)As quantum wells and bulk GaAs in the high-carrier-density limit is presented. Using a time-resolved luminescence up-conversion technique with 80-fs temporal resolution, carrier temperatures are measured in the 100-fs-to-2-ns range. Our results show that the hot-carrier cooling rates in the quantum wells are significantly slower than in the bulk for carrier densities greater than 2×1018 cm-3. A comparison is made with previous publications to resolve the confusion concerning the difference in cooling rates in quasi-two- and three-dimensional systems.

AB - An investigation of the hot-carrier relaxation in GaAs/(Al,Ga)As quantum wells and bulk GaAs in the high-carrier-density limit is presented. Using a time-resolved luminescence up-conversion technique with 80-fs temporal resolution, carrier temperatures are measured in the 100-fs-to-2-ns range. Our results show that the hot-carrier cooling rates in the quantum wells are significantly slower than in the bulk for carrier densities greater than 2×1018 cm-3. A comparison is made with previous publications to resolve the confusion concerning the difference in cooling rates in quasi-two- and three-dimensional systems.

UR - https://www.scopus.com/pages/publications/0000711410

U2 - 10.1103/PhysRevB.45.1450

DO - 10.1103/PhysRevB.45.1450

M3 - Article

AN - SCOPUS:0000711410

SN - 0163-1829

VL - 45

SP - 1450

EP - 1453

JO - Physical Review B

JF - Physical Review B

IS - 3

ER -

Comparison of Hot-Carrier Relaxation in Quantum Wells and Bulk GaAs at High Carrier Densities

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